Low frequency noise in quantum-well GexSi1-x PMOSFET's

J. Chang; D. K. Nayak; V. K. Raman; J. C.S. Woo; J. S. Park; K. L. Wang; C. R. Viswanathan

doi:10.1016/0167-9317(91)90174-c

Low frequency noise in quantum-well Ge_xSi_1-x PMOSFET's

J. Chang
, D. K. Nayak
, V. K. Raman
, J. C.S. Woo
, J. S. Park
, K. L. Wang
, C. R. Viswanathan

College of Electrical Engineering and Computer Science

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

This paper describes the low frequency noise behavior of a quantum-well Ge_xSi_1-x p-channel MOSFET. Two noise mechanisms were involved in this buried channel device. At room temperature, generation-recombination (g-r) noise dominates, while at very low temperature, flicker (1/f) noise becomes important.

Original language	English
Title of host publication	European Solid-State Device Research Conference
Editors	M. Ilegems, M. Dutoit
Publisher	IEEE Computer Society
Pages	19-22
Number of pages	4
ISBN (Electronic)	0444890661
DOIs	https://doi.org/10.1016/0167-9317(91)90174-c
Publication status	Published - 1991
Event	21st European Solid State Device Research Conference, ESSDERC 1991 - Montreux, Switzerland Duration: 1991 Sept 16 → 1991 Sept 19

Publication series

Name	European Solid-State Device Research Conference
ISSN (Print)	1930-8876
ISSN (Electronic)	2378-6558

Conference

Conference	21st European Solid State Device Research Conference, ESSDERC 1991
Country/Territory	Switzerland
City	Montreux
Period	91-09-16 → 91-09-19

All Science Journal Classification (ASJC) codes

Electrical and Electronic Engineering
Safety, Risk, Reliability and Quality

Access to Document

10.1016/0167-9317(91)90174-c

Cite this

Chang, J., Nayak, D. K., Raman, V. K., Woo, J. C. S., Park, J. S., Wang, K. L., & Viswanathan, C. R. (1991). Low frequency noise in quantum-well Ge_xSi_1-x PMOSFET's. In M. Ilegems, & M. Dutoit (Eds.), European Solid-State Device Research Conference (pp. 19-22). Article 5436260 (European Solid-State Device Research Conference). IEEE Computer Society. https://doi.org/10.1016/0167-9317(91)90174-c

@inproceedings{37d55a25f1f84be8bf0db7279cd72645,

title = "Low frequency noise in quantum-well GexSi1-x PMOSFET's",

abstract = "This paper describes the low frequency noise behavior of a quantum-well GexSi1-x p-channel MOSFET. Two noise mechanisms were involved in this buried channel device. At room temperature, generation-recombination (g-r) noise dominates, while at very low temperature, flicker (1/f) noise becomes important.",

author = "J. Chang and Nayak, \{D. K.\} and Raman, \{V. K.\} and Woo, \{J. C.S.\} and Park, \{J. S.\} and Wang, \{K. L.\} and Viswanathan, \{C. R.\}",

note = "Publisher Copyright: {\textcopyright} 1991 Elsevier Science Publishers B.V. All rights reserved.; 21st European Solid State Device Research Conference, ESSDERC 1991 ; Conference date: 16-09-1991 Through 19-09-1991",

year = "1991",

doi = "10.1016/0167-9317(91)90174-c",

language = "English",

series = "European Solid-State Device Research Conference",

publisher = "IEEE Computer Society",

pages = "19--22",

editor = "M. Ilegems and M. Dutoit",

booktitle = "European Solid-State Device Research Conference",

address = "United States",

}

Chang, J, Nayak, DK, Raman, VK, Woo, JCS, Park, JS, Wang, KL & Viswanathan, CR 1991, Low frequency noise in quantum-well Ge_xSi_1-x PMOSFET's. in M Ilegems & M Dutoit (eds), European Solid-State Device Research Conference., 5436260, European Solid-State Device Research Conference, IEEE Computer Society, pp. 19-22, 21st European Solid State Device Research Conference, ESSDERC 1991, Montreux, Switzerland, 91-09-16. https://doi.org/10.1016/0167-9317(91)90174-c

TY - GEN

T1 - Low frequency noise in quantum-well GexSi1-x PMOSFET's

AU - Chang, J.

AU - Nayak, D. K.

AU - Raman, V. K.

AU - Woo, J. C.S.

AU - Park, J. S.

AU - Wang, K. L.

AU - Viswanathan, C. R.

PY - 1991

Y1 - 1991

N2 - This paper describes the low frequency noise behavior of a quantum-well GexSi1-x p-channel MOSFET. Two noise mechanisms were involved in this buried channel device. At room temperature, generation-recombination (g-r) noise dominates, while at very low temperature, flicker (1/f) noise becomes important.

AB - This paper describes the low frequency noise behavior of a quantum-well GexSi1-x p-channel MOSFET. Two noise mechanisms were involved in this buried channel device. At room temperature, generation-recombination (g-r) noise dominates, while at very low temperature, flicker (1/f) noise becomes important.

UR - https://www.scopus.com/pages/publications/84907798310

UR - https://www.scopus.com/pages/publications/84907798310#tab=citedBy

U2 - 10.1016/0167-9317(91)90174-c

DO - 10.1016/0167-9317(91)90174-c

M3 - Conference contribution

AN - SCOPUS:84907798310

T3 - European Solid-State Device Research Conference

SP - 19

EP - 22

BT - European Solid-State Device Research Conference

A2 - Ilegems, M.

A2 - Dutoit, M.

PB - IEEE Computer Society

T2 - 21st European Solid State Device Research Conference, ESSDERC 1991

Y2 - 16 September 1991 through 19 September 1991

ER -