Low frequency noise in quantum-well GexSi1-x PMOSFET's

J. Chang; D. K. Nayak; V. K. Raman; J. C.S. Woo; J. S. Park; K. L. Wang; C. R. Viswanathan

doi:10.1016/0167-9317(91)90174-C

Low frequency noise in quantum-well Ge_xSi_1-x PMOSFET's

J. Chang
, D. K. Nayak
, V. K. Raman
, J. C.S. Woo
, J. S. Park
, K. L. Wang
, C. R. Viswanathan

College of Electrical Engineering and Computer Science

Research output: Contribution to journal › Article › peer-review

4 Citations (Scopus)

Abstract

This paper describes the low frequency noise behaviour of a quantum-well Ge_xSi_1-x p-channel MOSFET. Two noise mechanisms were involved in this buried channel device. At room temperature, generation-recombination (g-r) noise dominates, while at very low temperature, flicker (1/f) noise becomes important.

Original language	English
Pages (from-to)	19-22
Number of pages	4
Journal	Microelectronic Engineering
Volume	15
Issue number	1-4
DOIs	https://doi.org/10.1016/0167-9317(91)90174-C
Publication status	Published - 1991 Oct

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Atomic and Molecular Physics, and Optics
Condensed Matter Physics
Surfaces, Coatings and Films
Electrical and Electronic Engineering

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10.1016/0167-9317(91)90174-C

Cite this

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title = "Low frequency noise in quantum-well GexSi1-x PMOSFET's",

abstract = "This paper describes the low frequency noise behaviour of a quantum-well GexSi1-x p-channel MOSFET. Two noise mechanisms were involved in this buried channel device. At room temperature, generation-recombination (g-r) noise dominates, while at very low temperature, flicker (1/f) noise becomes important.",

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AU - Chang, J.

AU - Nayak, D. K.

AU - Raman, V. K.

AU - Woo, J. C.S.

AU - Park, J. S.

AU - Wang, K. L.

AU - Viswanathan, C. R.

PY - 1991/10

Y1 - 1991/10

N2 - This paper describes the low frequency noise behaviour of a quantum-well GexSi1-x p-channel MOSFET. Two noise mechanisms were involved in this buried channel device. At room temperature, generation-recombination (g-r) noise dominates, while at very low temperature, flicker (1/f) noise becomes important.

AB - This paper describes the low frequency noise behaviour of a quantum-well GexSi1-x p-channel MOSFET. Two noise mechanisms were involved in this buried channel device. At room temperature, generation-recombination (g-r) noise dominates, while at very low temperature, flicker (1/f) noise becomes important.

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M3 - Article

AN - SCOPUS:0026237813

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VL - 15

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JO - Microelectronic Engineering

JF - Microelectronic Engineering

IS - 1-4

ER -

Low frequency noise in quantum-well Ge_xSi_1-x PMOSFET's

Abstract

All Science Journal Classification (ASJC) codes

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