Low-frequency noise in top-gated ambipolar carbon nanotube field effect transistors

Guangyu Xu; Fei Liu; Song Han; Koungmin Ryu; Alexander Badmaev; Bo Lei; Chongwu Zhou; Kang L. Wang

doi:10.1063/1.2940590

Low-frequency noise in top-gated ambipolar carbon nanotube field effect transistors

Guangyu Xu
, Fei Liu
, Song Han
, Koungmin Ryu
, Alexander Badmaev
, Bo Lei
, Chongwu Zhou
, Kang L. Wang

College of Electrical Engineering and Computer Science

Research output: Contribution to journal › Article › peer-review

25 Citations (Scopus)

Abstract

Low-frequency noise of top-gated ambipolar carbon nanotube field effect transistors (CNT-FETs) with aligned CNT growth onto the quartz substrate is presented. The noise of top-gated CNT-FETs in air is lower than that of back-gated devices, and is comparable to that of back-gated devices in vacuum. It shows that molecules in air act as additional scattering sources, which contribute to the noise. Different noise amplitudes in the electron-conduction and the hole-conduction regions are due to different Schottky barriers with respect to the conduction and valance bands as well as the scattering in the channel.

Original language	English
Article number	223114
Journal	Applied Physics Letters
Volume	92
Issue number	22
DOIs	https://doi.org/10.1063/1.2940590
Publication status	Published - 2008

All Science Journal Classification (ASJC) codes

Physics and Astronomy (miscellaneous)

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10.1063/1.2940590

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title = "Low-frequency noise in top-gated ambipolar carbon nanotube field effect transistors",

abstract = "Low-frequency noise of top-gated ambipolar carbon nanotube field effect transistors (CNT-FETs) with aligned CNT growth onto the quartz substrate is presented. The noise of top-gated CNT-FETs in air is lower than that of back-gated devices, and is comparable to that of back-gated devices in vacuum. It shows that molecules in air act as additional scattering sources, which contribute to the noise. Different noise amplitudes in the electron-conduction and the hole-conduction regions are due to different Schottky barriers with respect to the conduction and valance bands as well as the scattering in the channel.",

author = "Guangyu Xu and Fei Liu and Song Han and Koungmin Ryu and Alexander Badmaev and Bo Lei and Chongwu Zhou and Wang, \{Kang L.\}",

note = "Funding Information: We acknowledge experimental help from X. Han and M. Bao. This work was in part supported by MARCO Focus Center on Functional Engineered Nano Architectonics (FENA), monitored by Dr. Betsy Weitzman.",

year = "2008",

doi = "10.1063/1.2940590",

language = "English",

volume = "92",

journal = "Applied Physics Letters",

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T1 - Low-frequency noise in top-gated ambipolar carbon nanotube field effect transistors

AU - Xu, Guangyu

AU - Liu, Fei

AU - Han, Song

AU - Ryu, Koungmin

AU - Badmaev, Alexander

AU - Lei, Bo

AU - Zhou, Chongwu

AU - Wang, Kang L.

N1 - Funding Information: We acknowledge experimental help from X. Han and M. Bao. This work was in part supported by MARCO Focus Center on Functional Engineered Nano Architectonics (FENA), monitored by Dr. Betsy Weitzman.

PY - 2008

Y1 - 2008

N2 - Low-frequency noise of top-gated ambipolar carbon nanotube field effect transistors (CNT-FETs) with aligned CNT growth onto the quartz substrate is presented. The noise of top-gated CNT-FETs in air is lower than that of back-gated devices, and is comparable to that of back-gated devices in vacuum. It shows that molecules in air act as additional scattering sources, which contribute to the noise. Different noise amplitudes in the electron-conduction and the hole-conduction regions are due to different Schottky barriers with respect to the conduction and valance bands as well as the scattering in the channel.

AB - Low-frequency noise of top-gated ambipolar carbon nanotube field effect transistors (CNT-FETs) with aligned CNT growth onto the quartz substrate is presented. The noise of top-gated CNT-FETs in air is lower than that of back-gated devices, and is comparable to that of back-gated devices in vacuum. It shows that molecules in air act as additional scattering sources, which contribute to the noise. Different noise amplitudes in the electron-conduction and the hole-conduction regions are due to different Schottky barriers with respect to the conduction and valance bands as well as the scattering in the channel.

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JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 22

M1 - 223114

ER -

Low-frequency noise in top-gated ambipolar carbon nanotube field effect transistors

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