Low frequency noise of chlorine-treated GaN/AlGaN MSM-photodetectors

De En Lu, Ya Lan Chiou, Hsin Ying Lee, Ching Ting Lee

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Prior to the deposition of the Ni/Au interdigital electrodes, the GaN surface of GaN/AlGaN metal-semiconductor-metal (MSM) ultraviolet photodetectors was chlorine-treated. The low frequency noise equivalent power of the chlorine-treated photodetectors, measured at a bias of 5 V, was 5.13×10-10 W, which was one order of magnitude lower than that of the photodetectors without chlorination surface treatment. The normalized detectivity of the chlorine-treated photodetectors was 6.16×108 cmHz0.5W-1, which was higher than that of untreated one. The dark current of chlorine-treated and untreated photodetectors, operated at 5 V, was 1.45×10-11 A and 3.68×10-11 A, respectively. The performance improvement was attributed to the passivation of GaN surface by chlorination treatment.

Original languageEnglish
Title of host publicationECS Transactions - State-of-the-Art Program on Compound Semiconductors 50 (SOTAPOCS 50)and Processes at the Semiconductor Solution Interface 3
Pages39-44
Number of pages6
Edition3
DOIs
Publication statusPublished - 2009 Dec 1
Event50th State-of-the-Art Symposium on Compound Semiconductors, SOTAPOCS 50 and 3rd International Symposium on Processes at the Semiconductor-Solution Interface, PSSI 3 - 215th ECS Meeting - San Francisco, CA, United States
Duration: 2009 May 242009 May 29

Publication series

NameECS Transactions
Number3
Volume19
ISSN (Print)1938-5862
ISSN (Electronic)1938-6737

Other

Other50th State-of-the-Art Symposium on Compound Semiconductors, SOTAPOCS 50 and 3rd International Symposium on Processes at the Semiconductor-Solution Interface, PSSI 3 - 215th ECS Meeting
CountryUnited States
CitySan Francisco, CA
Period09-05-2409-05-29

All Science Journal Classification (ASJC) codes

  • Engineering(all)

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