Low frequency noise of chlorine-treated GaN/AlGaN MSM-photodetectors

De En Lu; Ya Lan Chiou; Hsin Ying Lee; Ching Ting Lee

doi:10.1149/1.3120684

Low frequency noise of chlorine-treated GaN/AlGaN MSM-photodetectors

De En Lu, Ya Lan Chiou, Hsin Ying Lee, Ching Ting Lee

Department of Photonics

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

Prior to the deposition of the Ni/Au interdigital electrodes, the GaN surface of GaN/AlGaN metal-semiconductor-metal (MSM) ultraviolet photodetectors was chlorine-treated. The low frequency noise equivalent power of the chlorine-treated photodetectors, measured at a bias of 5 V, was 5.13×10^-10 W, which was one order of magnitude lower than that of the photodetectors without chlorination surface treatment. The normalized detectivity of the chlorine-treated photodetectors was 6.16×10⁸ cmHz^0.5W^-1, which was higher than that of untreated one. The dark current of chlorine-treated and untreated photodetectors, operated at 5 V, was 1.45×10^-11 A and 3.68×10^-11 A, respectively. The performance improvement was attributed to the passivation of GaN surface by chlorination treatment.

Original language	English
Title of host publication	ECS Transactions - State-of-the-Art Program on Compound Semiconductors 50 (SOTAPOCS 50)and Processes at the Semiconductor Solution Interface 3
Pages	39-44
Number of pages	6
Edition	3
DOIs	https://doi.org/10.1149/1.3120684
Publication status	Published - 2009 Dec 1
Event	50th State-of-the-Art Symposium on Compound Semiconductors, SOTAPOCS 50 and 3rd International Symposium on Processes at the Semiconductor-Solution Interface, PSSI 3 - 215th ECS Meeting - San Francisco, CA, United States Duration: 2009 May 24 → 2009 May 29

Publication series

Name	ECS Transactions
Number	3
Volume	19
ISSN (Print)	1938-5862
ISSN (Electronic)	1938-6737

Other

Other	50th State-of-the-Art Symposium on Compound Semiconductors, SOTAPOCS 50 and 3rd International Symposium on Processes at the Semiconductor-Solution Interface, PSSI 3 - 215th ECS Meeting
Country	United States
City	San Francisco, CA
Period	09-05-24 → 09-05-29

All Science Journal Classification (ASJC) codes

Engineering(all)

Access to Document

10.1149/1.3120684

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@inproceedings{01bac589e533440193a5ce8b5dbccb92,

title = "Low frequency noise of chlorine-treated GaN/AlGaN MSM-photodetectors",

abstract = "Prior to the deposition of the Ni/Au interdigital electrodes, the GaN surface of GaN/AlGaN metal-semiconductor-metal (MSM) ultraviolet photodetectors was chlorine-treated. The low frequency noise equivalent power of the chlorine-treated photodetectors, measured at a bias of 5 V, was 5.13×10-10 W, which was one order of magnitude lower than that of the photodetectors without chlorination surface treatment. The normalized detectivity of the chlorine-treated photodetectors was 6.16×108 cmHz0.5W-1, which was higher than that of untreated one. The dark current of chlorine-treated and untreated photodetectors, operated at 5 V, was 1.45×10-11 A and 3.68×10-11 A, respectively. The performance improvement was attributed to the passivation of GaN surface by chlorination treatment.",

author = "Lu, {De En} and Chiou, {Ya Lan} and Lee, {Hsin Ying} and Lee, {Ching Ting}",

year = "2009",

month = dec,

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doi = "10.1149/1.3120684",

language = "English",

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series = "ECS Transactions",

number = "3",

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booktitle = "ECS Transactions - State-of-the-Art Program on Compound Semiconductors 50 (SOTAPOCS 50)and Processes at the Semiconductor Solution Interface 3",

edition = "3",

note = "50th State-of-the-Art Symposium on Compound Semiconductors, SOTAPOCS 50 and 3rd International Symposium on Processes at the Semiconductor-Solution Interface, PSSI 3 - 215th ECS Meeting ; Conference date: 24-05-2009 Through 29-05-2009",

}

Lu, DE, Chiou, YL, Lee, HY & Lee, CT 2009, Low frequency noise of chlorine-treated GaN/AlGaN MSM-photodetectors. in ECS Transactions - State-of-the-Art Program on Compound Semiconductors 50 (SOTAPOCS 50)and Processes at the Semiconductor Solution Interface 3. 3 edn, ECS Transactions, no. 3, vol. 19, pp. 39-44, 50th State-of-the-Art Symposium on Compound Semiconductors, SOTAPOCS 50 and 3rd International Symposium on Processes at the Semiconductor-Solution Interface, PSSI 3 - 215th ECS Meeting, San Francisco, CA, United States, 09-05-24. https://doi.org/10.1149/1.3120684

Low frequency noise of chlorine-treated GaN/AlGaN MSM-photodetectors. / Lu, De En; Chiou, Ya Lan; Lee, Hsin Ying ; Lee, Ching Ting.

ECS Transactions - State-of-the-Art Program on Compound Semiconductors 50 (SOTAPOCS 50)and Processes at the Semiconductor Solution Interface 3. 3. ed. 2009. p. 39-44 (ECS Transactions; Vol. 19, No. 3).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

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AU - Chiou, Ya Lan

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N2 - Prior to the deposition of the Ni/Au interdigital electrodes, the GaN surface of GaN/AlGaN metal-semiconductor-metal (MSM) ultraviolet photodetectors was chlorine-treated. The low frequency noise equivalent power of the chlorine-treated photodetectors, measured at a bias of 5 V, was 5.13×10-10 W, which was one order of magnitude lower than that of the photodetectors without chlorination surface treatment. The normalized detectivity of the chlorine-treated photodetectors was 6.16×108 cmHz0.5W-1, which was higher than that of untreated one. The dark current of chlorine-treated and untreated photodetectors, operated at 5 V, was 1.45×10-11 A and 3.68×10-11 A, respectively. The performance improvement was attributed to the passivation of GaN surface by chlorination treatment.

AB - Prior to the deposition of the Ni/Au interdigital electrodes, the GaN surface of GaN/AlGaN metal-semiconductor-metal (MSM) ultraviolet photodetectors was chlorine-treated. The low frequency noise equivalent power of the chlorine-treated photodetectors, measured at a bias of 5 V, was 5.13×10-10 W, which was one order of magnitude lower than that of the photodetectors without chlorination surface treatment. The normalized detectivity of the chlorine-treated photodetectors was 6.16×108 cmHz0.5W-1, which was higher than that of untreated one. The dark current of chlorine-treated and untreated photodetectors, operated at 5 V, was 1.45×10-11 A and 3.68×10-11 A, respectively. The performance improvement was attributed to the passivation of GaN surface by chlorination treatment.

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