@inproceedings{01bac589e533440193a5ce8b5dbccb92,
title = "Low frequency noise of chlorine-treated GaN/AlGaN MSM-photodetectors",
abstract = "Prior to the deposition of the Ni/Au interdigital electrodes, the GaN surface of GaN/AlGaN metal-semiconductor-metal (MSM) ultraviolet photodetectors was chlorine-treated. The low frequency noise equivalent power of the chlorine-treated photodetectors, measured at a bias of 5 V, was 5.13×10-10 W, which was one order of magnitude lower than that of the photodetectors without chlorination surface treatment. The normalized detectivity of the chlorine-treated photodetectors was 6.16×108 cmHz0.5W-1, which was higher than that of untreated one. The dark current of chlorine-treated and untreated photodetectors, operated at 5 V, was 1.45×10-11 A and 3.68×10-11 A, respectively. The performance improvement was attributed to the passivation of GaN surface by chlorination treatment.",
author = "Lu, {De En} and Chiou, {Ya Lan} and Lee, {Hsin Ying} and Lee, {Ching Ting}",
year = "2009",
doi = "10.1149/1.3120684",
language = "English",
isbn = "9781566777117",
series = "ECS Transactions",
publisher = "Electrochemical Society Inc.",
number = "3",
pages = "39--44",
booktitle = "ECS Transactions - State-of-the-Art Program on Compound Semiconductors 50 (SOTAPOCS 50)and Processes at the Semiconductor Solution Interface 3",
edition = "3",
note = "50th State-of-the-Art Symposium on Compound Semiconductors, SOTAPOCS 50 and 3rd International Symposium on Processes at the Semiconductor-Solution Interface, PSSI 3 - 215th ECS Meeting ; Conference date: 24-05-2009 Through 29-05-2009",
}