TY - GEN
T1 - Low frequency noise of chlorine-treated GaN/AlGaN MSM-photodetectors
AU - Lu, De En
AU - Chiou, Ya Lan
AU - Lee, Hsin Ying
AU - Lee, Ching Ting
PY - 2009/12/1
Y1 - 2009/12/1
N2 - Prior to the deposition of the Ni/Au interdigital electrodes, the GaN surface of GaN/AlGaN metal-semiconductor-metal (MSM) ultraviolet photodetectors was chlorine-treated. The low frequency noise equivalent power of the chlorine-treated photodetectors, measured at a bias of 5 V, was 5.13×10-10 W, which was one order of magnitude lower than that of the photodetectors without chlorination surface treatment. The normalized detectivity of the chlorine-treated photodetectors was 6.16×108 cmHz0.5W-1, which was higher than that of untreated one. The dark current of chlorine-treated and untreated photodetectors, operated at 5 V, was 1.45×10-11 A and 3.68×10-11 A, respectively. The performance improvement was attributed to the passivation of GaN surface by chlorination treatment.
AB - Prior to the deposition of the Ni/Au interdigital electrodes, the GaN surface of GaN/AlGaN metal-semiconductor-metal (MSM) ultraviolet photodetectors was chlorine-treated. The low frequency noise equivalent power of the chlorine-treated photodetectors, measured at a bias of 5 V, was 5.13×10-10 W, which was one order of magnitude lower than that of the photodetectors without chlorination surface treatment. The normalized detectivity of the chlorine-treated photodetectors was 6.16×108 cmHz0.5W-1, which was higher than that of untreated one. The dark current of chlorine-treated and untreated photodetectors, operated at 5 V, was 1.45×10-11 A and 3.68×10-11 A, respectively. The performance improvement was attributed to the passivation of GaN surface by chlorination treatment.
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U2 - 10.1149/1.3120684
DO - 10.1149/1.3120684
M3 - Conference contribution
AN - SCOPUS:74349083932
SN - 9781566777117
T3 - ECS Transactions
SP - 39
EP - 44
BT - ECS Transactions - State-of-the-Art Program on Compound Semiconductors 50 (SOTAPOCS 50)and Processes at the Semiconductor Solution Interface 3
T2 - 50th State-of-the-Art Symposium on Compound Semiconductors, SOTAPOCS 50 and 3rd International Symposium on Processes at the Semiconductor-Solution Interface, PSSI 3 - 215th ECS Meeting
Y2 - 24 May 2009 through 29 May 2009
ER -