The low-frequency noise characteristics in strained-Si nMOSFETs, utilizing the chemical-mechanical-polishing (CMP) treated SiGe virtual substrate have been investigated and compared with the results obtained on strained-Si counterparts without CMP technology. Additional 10.6% mobility improvement and four times lower 1/f noise over 1-100 Hz was obtained for strained-Si devices with the CMP process, indicting that the CMP process provides a smoother surface for the strained-Si/SiGe structure. Moreover, experimental results show that carrier number fluctuation, and not the unified model, is more suitable to interpret the mechanism of 1/f noise in strained-Si devices with the CMP process.
All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics
- Electrical and Electronic Engineering
- Materials Chemistry