Low-frequency noise of strained-Si nMOSFETs fabricated on a chemical-mechanical-polished SiGe virtual substrate

H. Y. Lin, S. L. Wu, Shoou-Jinn Chang, Y. P. Wang, C. W. Kuo

Research output: Contribution to journalArticle

2 Citations (Scopus)

Abstract

The low-frequency noise characteristics in strained-Si nMOSFETs, utilizing the chemical-mechanical-polishing (CMP) treated SiGe virtual substrate have been investigated and compared with the results obtained on strained-Si counterparts without CMP technology. Additional 10.6% mobility improvement and four times lower 1/f noise over 1-100 Hz was obtained for strained-Si devices with the CMP process, indicting that the CMP process provides a smoother surface for the strained-Si/SiGe structure. Moreover, experimental results show that carrier number fluctuation, and not the unified model, is more suitable to interpret the mechanism of 1/f noise in strained-Si devices with the CMP process.

Original languageEnglish
Article number105022
JournalSemiconductor Science and Technology
Volume23
Issue number10
DOIs
Publication statusPublished - 2008 Oct 1

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

Fingerprint Dive into the research topics of 'Low-frequency noise of strained-Si nMOSFETs fabricated on a chemical-mechanical-polished SiGe virtual substrate'. Together they form a unique fingerprint.

  • Cite this