Abstract
High quality SiO2 was successfully deposited onto AlGaN by photo chemical vapor deposition (photo-CVD) using D2 lamp as the excitation source. It was found that the interface state density was only 1.1 × 1011 cm-2 eV-1. AlGaN/GaN metal-oxide-semiconductor heterojunction field effect transistors (MOSHFETs) were also fabricated with such photo-CVD oxide as the insulating layer. Compared with AlGaN/GaN metal-semiconductor HFETs (MESHFETs) with similar structure, it was found that we could reduce the gate leakage current by more than four orders of magnitude by inserting the 32 nm-thick photo-CVD SiO2 layer between AlGaN/GaN and gate metal. With a 1 μm gate length, it was found that room temperature saturated Ids, maximum gm and gate voltage swing (GVS) of the fabricated nitride-based MOSHFET are 800 mA/mm, 86 mS/mm and 9 V, respectively.
Original language | English |
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Pages (from-to) | 2355-2359 |
Number of pages | 5 |
Journal | Physica Status Solidi C: Conferences |
Issue number | 7 |
DOIs | |
Publication status | Published - 2003 |
Event | 5th International Conference on Nitride Semiconductors, ICNS 2003 - Nara, Japan Duration: 2003 May 25 → 2003 May 30 |
All Science Journal Classification (ASJC) codes
- Condensed Matter Physics