Low-leakage current and high-breakdown voltage GaAs-based heterostructure field-effect transistor with In0.5(Al0.66Ga0.34)0.5P Schottky layer

Y. S. Lin, W. C. Hsu, C. S. Yang

Research output: Contribution to journal › Article

6 Citations (Scopus)

Abstract

An In0.5(Al0.66Ga0.34)0.5P/GaAs heterostructure field-effect transistor has been fabricated by metal-organic chemical vapor deposition. A turn-on voltage as high as 3.2 V along with an extremely low gate reverse leakage current of 69 μA/mm at VGD = -40V are achieved. In addition, it is found that the device can be operated with gate voltage up to 1.5 V without significant drain current compression. These characteristics are attributed to the use of high Schottky barrier height, high band gap of In0.5(Al0.66Ga0.34)0.5P Schottky layer, and to the large conduction-band discontinuity at the In0.5(Al0.66Ga0.34)0.5P/GaAs heterojunction.

Original languageEnglish
Pages (from-to)3551-3553
Number of pages3
JournalApplied Physics Letters
Volume75
Issue number22
DOIs
Publication statusPublished - 1999 Nov 29

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electrical faults
leakage
field effect transistors
electric potential
metalorganic chemical vapor deposition
heterojunctions
discontinuity
conduction bands

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

Cite this

Lin, Y. S. ; Hsu, W. C. ; Yang, C. S. / Low-leakage current and high-breakdown voltage GaAs-based heterostructure field-effect transistor with In0.5(Al0.66Ga0.34)0.5P Schottky layer. In: Applied Physics Letters. 1999 ; Vol. 75, No. 22. pp. 3551-3553.
@article{a65f6d42410b4b27a070feaa6a1bca30,
title = "Low-leakage current and high-breakdown voltage GaAs-based heterostructure field-effect transistor with In0.5(Al0.66Ga0.34)0.5P Schottky layer",
abstract = "An In0.5(Al0.66Ga0.34)0.5P/GaAs heterostructure field-effect transistor has been fabricated by metal-organic chemical vapor deposition. A turn-on voltage as high as 3.2 V along with an extremely low gate reverse leakage current of 69 μA/mm at VGD = -40V are achieved. In addition, it is found that the device can be operated with gate voltage up to 1.5 V without significant drain current compression. These characteristics are attributed to the use of high Schottky barrier height, high band gap of In0.5(Al0.66Ga0.34)0.5P Schottky layer, and to the large conduction-band discontinuity at the In0.5(Al0.66Ga0.34)0.5P/GaAs heterojunction.",
author = "Lin, {Y. S.} and Hsu, {W. C.} and Yang, {C. S.}",
year = "1999",
month = "11",
day = "29",
doi = "10.1063/1.125385",
language = "English",
volume = "75",
pages = "3551--3553",
journal = "Applied Physics Letters",
issn = "0003-6951",
publisher = "American Institute of Physics Publising LLC",
number = "22",

}

Lin, YS, Hsu, WC & Yang, CS 1999, 'Low-leakage current and high-breakdown voltage GaAs-based heterostructure field-effect transistor with In0.5(Al0.66Ga0.34)0.5P Schottky layer', Applied Physics Letters, vol. 75, no. 22, pp. 3551-3553. https://doi.org/10.1063/1.125385

Low-leakage current and high-breakdown voltage GaAs-based heterostructure field-effect transistor with In0.5(Al0.66Ga0.34)0.5P Schottky layer. / Lin, Y. S.; Hsu, W. C.; Yang, C. S.

In: Applied Physics Letters, Vol. 75, No. 22, 29.11.1999, p. 3551-3553.

Research output: Contribution to journal › Article

TY - JOUR

T1 - Low-leakage current and high-breakdown voltage GaAs-based heterostructure field-effect transistor with In0.5(Al0.66Ga0.34)0.5P Schottky layer

AU - Lin, Y. S.

AU - Hsu, W. C.

AU - Yang, C. S.

PY - 1999/11/29

Y1 - 1999/11/29

N2 - An In0.5(Al0.66Ga0.34)0.5P/GaAs heterostructure field-effect transistor has been fabricated by metal-organic chemical vapor deposition. A turn-on voltage as high as 3.2 V along with an extremely low gate reverse leakage current of 69 μA/mm at VGD = -40V are achieved. In addition, it is found that the device can be operated with gate voltage up to 1.5 V without significant drain current compression. These characteristics are attributed to the use of high Schottky barrier height, high band gap of In0.5(Al0.66Ga0.34)0.5P Schottky layer, and to the large conduction-band discontinuity at the In0.5(Al0.66Ga0.34)0.5P/GaAs heterojunction.

AB - An In0.5(Al0.66Ga0.34)0.5P/GaAs heterostructure field-effect transistor has been fabricated by metal-organic chemical vapor deposition. A turn-on voltage as high as 3.2 V along with an extremely low gate reverse leakage current of 69 μA/mm at VGD = -40V are achieved. In addition, it is found that the device can be operated with gate voltage up to 1.5 V without significant drain current compression. These characteristics are attributed to the use of high Schottky barrier height, high band gap of In0.5(Al0.66Ga0.34)0.5P Schottky layer, and to the large conduction-band discontinuity at the In0.5(Al0.66Ga0.34)0.5P/GaAs heterojunction.

UR - http://www.scopus.com/inward/record.url?scp=0013230149&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0013230149&partnerID=8YFLogxK

U2 - 10.1063/1.125385

DO - 10.1063/1.125385

M3 - Article

AN - SCOPUS:0013230149

VL - 75

SP - 3551

EP - 3553

JO - Applied Physics Letters

JF - Applied Physics Letters

SN - 0003-6951

IS - 22

ER -

Lin YS, Hsu WC, Yang CS. Low-leakage current and high-breakdown voltage GaAs-based heterostructure field-effect transistor with In0.5(Al0.66Ga0.34)0.5P Schottky layer. Applied Physics Letters. 1999 Nov 29;75(22):3551-3553. https://doi.org/10.1063/1.125385

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