Low-leakage current and high-breakdown voltage GaAs-based heterostructure field-effect transistor with In0.5(Al0.66Ga0.34)0.5P Schottky layer

Y. S. Lin, W. C. Hsu, C. S. Yang

Research output: Contribution to journalArticlepeer-review

6 Citations (Scopus)

Abstract

An In0.5(Al0.66Ga0.34)0.5P/GaAs heterostructure field-effect transistor has been fabricated by metal-organic chemical vapor deposition. A turn-on voltage as high as 3.2 V along with an extremely low gate reverse leakage current of 69 μA/mm at VGD = -40V are achieved. In addition, it is found that the device can be operated with gate voltage up to 1.5 V without significant drain current compression. These characteristics are attributed to the use of high Schottky barrier height, high band gap of In0.5(Al0.66Ga0.34)0.5P Schottky layer, and to the large conduction-band discontinuity at the In0.5(Al0.66Ga0.34)0.5P/GaAs heterojunction.

Original languageEnglish
Pages (from-to)3551-3553
Number of pages3
JournalApplied Physics Letters
Volume75
Issue number22
DOIs
Publication statusPublished - 1999 Nov 29

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

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