Low-leakage current and high-breakdown voltage GaAs-based heterostructure field-effect transistor with In0.5(Al0.66Ga0.34)0.5P Schottky layer

Y. S. Lin; W. C. Hsu; C. S. Yang

doi:10.1063/1.125385

Low-leakage current and high-breakdown voltage GaAs-based heterostructure field-effect transistor with In_0.5(Al_0.66Ga_0.34)_0.5P Schottky layer

Y. S. Lin, W. C. Hsu, C. S. Yang

Research output: Contribution to journal › Article › peer-review

6 Citations (Scopus)

Abstract

An In_0.5(Al_0.66Ga_0.34)_0.5P/GaAs heterostructure field-effect transistor has been fabricated by metal-organic chemical vapor deposition. A turn-on voltage as high as 3.2 V along with an extremely low gate reverse leakage current of 69 μA/mm at V_GD = -40V are achieved. In addition, it is found that the device can be operated with gate voltage up to 1.5 V without significant drain current compression. These characteristics are attributed to the use of high Schottky barrier height, high band gap of In_0.5(Al_0.66Ga_0.34)_0.5P Schottky layer, and to the large conduction-band discontinuity at the In_0.5(Al_0.66Ga_0.34)_0.5P/GaAs heterojunction.

Original language	English
Pages (from-to)	3551-3553
Number of pages	3
Journal	Applied Physics Letters
Volume	75
Issue number	22
DOIs	https://doi.org/10.1063/1.125385
Publication status	Published - 1999 Nov 29

All Science Journal Classification (ASJC) codes

Physics and Astronomy (miscellaneous)

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title = "Low-leakage current and high-breakdown voltage GaAs-based heterostructure field-effect transistor with In0.5(Al0.66Ga0.34)0.5P Schottky layer",

abstract = "An In0.5(Al0.66Ga0.34)0.5P/GaAs heterostructure field-effect transistor has been fabricated by metal-organic chemical vapor deposition. A turn-on voltage as high as 3.2 V along with an extremely low gate reverse leakage current of 69 μA/mm at VGD = -40V are achieved. In addition, it is found that the device can be operated with gate voltage up to 1.5 V without significant drain current compression. These characteristics are attributed to the use of high Schottky barrier height, high band gap of In0.5(Al0.66Ga0.34)0.5P Schottky layer, and to the large conduction-band discontinuity at the In0.5(Al0.66Ga0.34)0.5P/GaAs heterojunction.",

author = "Lin, {Y. S.} and Hsu, {W. C.} and Yang, {C. S.}",

year = "1999",

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doi = "10.1063/1.125385",

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journal = "Applied Physics Letters",

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T1 - Low-leakage current and high-breakdown voltage GaAs-based heterostructure field-effect transistor with In0.5(Al0.66Ga0.34)0.5P Schottky layer

AU - Lin, Y. S.

AU - Hsu, W. C.

AU - Yang, C. S.

PY - 1999/11/29

Y1 - 1999/11/29

N2 - An In0.5(Al0.66Ga0.34)0.5P/GaAs heterostructure field-effect transistor has been fabricated by metal-organic chemical vapor deposition. A turn-on voltage as high as 3.2 V along with an extremely low gate reverse leakage current of 69 μA/mm at VGD = -40V are achieved. In addition, it is found that the device can be operated with gate voltage up to 1.5 V without significant drain current compression. These characteristics are attributed to the use of high Schottky barrier height, high band gap of In0.5(Al0.66Ga0.34)0.5P Schottky layer, and to the large conduction-band discontinuity at the In0.5(Al0.66Ga0.34)0.5P/GaAs heterojunction.

AB - An In0.5(Al0.66Ga0.34)0.5P/GaAs heterostructure field-effect transistor has been fabricated by metal-organic chemical vapor deposition. A turn-on voltage as high as 3.2 V along with an extremely low gate reverse leakage current of 69 μA/mm at VGD = -40V are achieved. In addition, it is found that the device can be operated with gate voltage up to 1.5 V without significant drain current compression. These characteristics are attributed to the use of high Schottky barrier height, high band gap of In0.5(Al0.66Ga0.34)0.5P Schottky layer, and to the large conduction-band discontinuity at the In0.5(Al0.66Ga0.34)0.5P/GaAs heterojunction.

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Low-leakage current and high-breakdown voltage GaAs-based heterostructure field-effect transistor with In_0.5(Al_0.66Ga_0.34)_0.5P Schottky layer

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