Abstract
An In0.5(Al0.66Ga0.34)0.5P/GaAs heterostructure field-effect transistor has been fabricated by metal-organic chemical vapor deposition. A turn-on voltage as high as 3.2 V along with an extremely low gate reverse leakage current of 69 μA/mm at VGD = -40V are achieved. In addition, it is found that the device can be operated with gate voltage up to 1.5 V without significant drain current compression. These characteristics are attributed to the use of high Schottky barrier height, high band gap of In0.5(Al0.66Ga0.34)0.5P Schottky layer, and to the large conduction-band discontinuity at the In0.5(Al0.66Ga0.34)0.5P/GaAs heterojunction.
Original language | English |
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Pages (from-to) | 3551-3553 |
Number of pages | 3 |
Journal | Applied Physics Letters |
Volume | 75 |
Issue number | 22 |
DOIs | |
Publication status | Published - 1999 Nov 29 |
All Science Journal Classification (ASJC) codes
- Physics and Astronomy (miscellaneous)