Low-noise and high-detectivity GaN-B ased UV photodiode with a semi-insulating Mg-doped GaN cap layer

P. C. Chang; C. L. Yu; Shoou-Jinn Chang; Yu-Cheng Lin; C. H. Liu; S. L. Wu

doi:10.1109/JSEN.2007.901266

Low-noise and high-detectivity GaN-B ased UV photodiode with a semi-insulating Mg-doped GaN cap layer

P. C. Chang, C. L. Yu, Shoou-Jinn Chang, Yu-Cheng Lin, C. H. Liu, S. L. Wu

Research output: Contribution to journal › Article › peer-review

15 Citations (Scopus)

Abstract

GaN-based ultraviolet photodiodes with a semi-insulating Mg-doped GaN cap layer were fabricated and characterized. Dark leakage current of the aforementioned photodiodes was much smaller than that of the conventional ones without the Mg-doped GaN cap layer due to a thicker and higher potential barrier and less amounts of interface states after inserting the Mg-doped GaN cap layer. The ultraviolet to visible rejection ratio is 3.44 ×10³ by inserting a semi-insulating Mg-doped GaN cap layer with a -1 V applied bias. In this study, we also discuss the noise characteristics. It was found that minimum noise equivalent power and maximum detectivity of our photodiode were 1.2 × 10^-12 W and 9.34 × 10¹¹ CmHz ^0.5W^-1, respectively.

Original language	English
Pages (from-to)	1270-1273
Number of pages	4
Journal	IEEE Sensors Journal
Volume	7
Issue number	9
DOIs	https://doi.org/10.1109/JSEN.2007.901266
Publication status	Published - 2007 Sep

All Science Journal Classification (ASJC) codes

Instrumentation
Electrical and Electronic Engineering

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10.1109/JSEN.2007.901266

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@article{cb3ab9530e8241629cd6a3cfd68d6906,

title = "Low-noise and high-detectivity GaN-B ased UV photodiode with a semi-insulating Mg-doped GaN cap layer",

abstract = "GaN-based ultraviolet photodiodes with a semi-insulating Mg-doped GaN cap layer were fabricated and characterized. Dark leakage current of the aforementioned photodiodes was much smaller than that of the conventional ones without the Mg-doped GaN cap layer due to a thicker and higher potential barrier and less amounts of interface states after inserting the Mg-doped GaN cap layer. The ultraviolet to visible rejection ratio is 3.44 ×103 by inserting a semi-insulating Mg-doped GaN cap layer with a -1 V applied bias. In this study, we also discuss the noise characteristics. It was found that minimum noise equivalent power and maximum detectivity of our photodiode were 1.2 × 10-12 W and 9.34 × 1011 CmHz 0.5W-1, respectively.",

author = "Chang, {P. C.} and Yu, {C. L.} and Shoou-Jinn Chang and Yu-Cheng Lin and Liu, {C. H.} and Wu, {S. L.}",

note = "Funding Information: Manuscript received March 1, 2007; accepted April 11, 2007. This work was supported in part by the National Science Council under Contract NSC 95-2221-E-232-004. The associate editor coordinating the review of this paper and approving it for publication was Prof. Michael Pishko.",

year = "2007",

month = sep,

doi = "10.1109/JSEN.2007.901266",

language = "English",

volume = "7",

pages = "1270--1273",

journal = "IEEE Sensors Journal",

issn = "1530-437X",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

number = "9",

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TY - JOUR

T1 - Low-noise and high-detectivity GaN-B ased UV photodiode with a semi-insulating Mg-doped GaN cap layer

AU - Chang, P. C.

AU - Yu, C. L.

AU - Chang, Shoou-Jinn

AU - Lin, Yu-Cheng

AU - Liu, C. H.

AU - Wu, S. L.

N1 - Funding Information: Manuscript received March 1, 2007; accepted April 11, 2007. This work was supported in part by the National Science Council under Contract NSC 95-2221-E-232-004. The associate editor coordinating the review of this paper and approving it for publication was Prof. Michael Pishko.

PY - 2007/9

Y1 - 2007/9

N2 - GaN-based ultraviolet photodiodes with a semi-insulating Mg-doped GaN cap layer were fabricated and characterized. Dark leakage current of the aforementioned photodiodes was much smaller than that of the conventional ones without the Mg-doped GaN cap layer due to a thicker and higher potential barrier and less amounts of interface states after inserting the Mg-doped GaN cap layer. The ultraviolet to visible rejection ratio is 3.44 ×103 by inserting a semi-insulating Mg-doped GaN cap layer with a -1 V applied bias. In this study, we also discuss the noise characteristics. It was found that minimum noise equivalent power and maximum detectivity of our photodiode were 1.2 × 10-12 W and 9.34 × 1011 CmHz 0.5W-1, respectively.

AB - GaN-based ultraviolet photodiodes with a semi-insulating Mg-doped GaN cap layer were fabricated and characterized. Dark leakage current of the aforementioned photodiodes was much smaller than that of the conventional ones without the Mg-doped GaN cap layer due to a thicker and higher potential barrier and less amounts of interface states after inserting the Mg-doped GaN cap layer. The ultraviolet to visible rejection ratio is 3.44 ×103 by inserting a semi-insulating Mg-doped GaN cap layer with a -1 V applied bias. In this study, we also discuss the noise characteristics. It was found that minimum noise equivalent power and maximum detectivity of our photodiode were 1.2 × 10-12 W and 9.34 × 1011 CmHz 0.5W-1, respectively.

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DO - 10.1109/JSEN.2007.901266

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JO - IEEE Sensors Journal

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SN - 1530-437X

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Low-noise and high-detectivity GaN-B ased UV photodiode with a semi-insulating Mg-doped GaN cap layer

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