Low-noise and high-detectivity GaN-B ased UV photodiode with a semi-insulating Mg-doped GaN cap layer

P. C. Chang, C. L. Yu, Shoou-Jinn Chang, Yu-Cheng Lin, C. H. Liu, S. L. Wu

Research output: Contribution to journalArticlepeer-review

15 Citations (Scopus)

Abstract

GaN-based ultraviolet photodiodes with a semi-insulating Mg-doped GaN cap layer were fabricated and characterized. Dark leakage current of the aforementioned photodiodes was much smaller than that of the conventional ones without the Mg-doped GaN cap layer due to a thicker and higher potential barrier and less amounts of interface states after inserting the Mg-doped GaN cap layer. The ultraviolet to visible rejection ratio is 3.44 ×103 by inserting a semi-insulating Mg-doped GaN cap layer with a -1 V applied bias. In this study, we also discuss the noise characteristics. It was found that minimum noise equivalent power and maximum detectivity of our photodiode were 1.2 × 10-12 W and 9.34 × 1011 CmHz 0.5W-1, respectively.

Original languageEnglish
Pages (from-to)1270-1273
Number of pages4
JournalIEEE Sensors Journal
Volume7
Issue number9
DOIs
Publication statusPublished - 2007 Sep 1

All Science Journal Classification (ASJC) codes

  • Instrumentation
  • Electrical and Electronic Engineering

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