Abstract
Pentacene-based organic thin-film transistors (TFTs) with solution-processed barium zirconate titanate as gate dielectrics are studied. The fabricated TFTs show a high field-effect mobility of 7.31 cm^{2V-1s} -1 at a VG of -3.6 V, a low threshold voltage of -1.60 V, and a low subthreshold slope swing of 162 mV/dec. Moreover, organic inverters with enhancement-mode load and driver are also investigated. The inverters demonstrate a high gain of 9.98, a low operating voltage of -5 V, and a low power dissipation of 1.14 \muW}. Very good agreements between simulation and experimental results are achieved.
Original language | English |
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Article number | 6036147 |
Pages (from-to) | 1755-1757 |
Number of pages | 3 |
Journal | IEEE Electron Device Letters |
Volume | 32 |
Issue number | 12 |
DOIs | |
Publication status | Published - 2011 Dec |
All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Electrical and Electronic Engineering