Low-operating-voltage pentacene-based transistors and inverters with solution-processed barium zirconate titanate insulators

Chia Yu Wei, Wen Chieh Huang, Chih Kai Yang, Yen Yu Chang, Yeong-Her Wang

Research output: Contribution to journalArticle

8 Citations (Scopus)

Abstract

Pentacene-based organic thin-film transistors (TFTs) with solution-processed barium zirconate titanate as gate dielectrics are studied. The fabricated TFTs show a high field-effect mobility of 7.31 cm^{2V-1s} -1 at a VG of -3.6 V, a low threshold voltage of -1.60 V, and a low subthreshold slope swing of 162 mV/dec. Moreover, organic inverters with enhancement-mode load and driver are also investigated. The inverters demonstrate a high gain of 9.98, a low operating voltage of -5 V, and a low power dissipation of 1.14 \muW}. Very good agreements between simulation and experimental results are achieved.

Original languageEnglish
Article number6036147
Pages (from-to)1755-1757
Number of pages3
JournalIEEE Electron Device Letters
Volume32
Issue number12
DOIs
Publication statusPublished - 2011 Dec 1

Fingerprint

Barium zirconate
Thin film transistors
Transistors
Gate dielectrics
Electric potential
Threshold voltage
Energy dissipation
pentacene

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

Cite this

Wei, Chia Yu ; Huang, Wen Chieh ; Yang, Chih Kai ; Chang, Yen Yu ; Wang, Yeong-Her. / Low-operating-voltage pentacene-based transistors and inverters with solution-processed barium zirconate titanate insulators. In: IEEE Electron Device Letters. 2011 ; Vol. 32, No. 12. pp. 1755-1757.
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Low-operating-voltage pentacene-based transistors and inverters with solution-processed barium zirconate titanate insulators. / Wei, Chia Yu; Huang, Wen Chieh; Yang, Chih Kai; Chang, Yen Yu; Wang, Yeong-Her.

In: IEEE Electron Device Letters, Vol. 32, No. 12, 6036147, 01.12.2011, p. 1755-1757.

Research output: Contribution to journalArticle

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