Low operation voltage of nitride-based LEDs with Al-doped ZnO transparent contact layer

C. H. Kuo, C. L. Yeh, P. H. Chen, Wei-Chi Lai, C. J. Tun, Jinn-Kong Sheu, G. C. Chi

Research output: Contribution to journalArticle

28 Citations (Scopus)

Abstract

We have developed nitride-based multiquantum well light-emitting diodes (LEDs) with E-beam evaporated Al-doped ZnO (AZO) transparent contact layers (TCLs). With 20 mA injection current, it was found that forward voltages were 3.32, 3.33, and 4.91 V, while output powers were 10.1, 11.8, and 6.0 mW for the indium-tin-oxide LED, E-beam evaporated AZO LED, and sputter-evaporated AZO LED, respectively. The low operation voltage of the E-beam evaporated AZO LED is attributed to the deposition of low-resistivity TCLs, and the elimination of plasma damage in the p-GaN layer is attributed to use of the E-beam evaporated AZO. The high output power of the E-beam evaporated AZO LED is due to the enhancement of light extraction resulting from the high refractive index of AZO TCL.

Original languageEnglish
JournalElectrochemical and Solid-State Letters
Volume11
Issue number9
DOIs
Publication statusPublished - 2008 Aug 4

Fingerprint

Nitrides
nitrides
Light emitting diodes
light emitting diodes
Electric potential
electric potential
output
Tin oxides
indium oxides
Indium
tin oxides
elimination
Refractive index
refractivity
injection
damage
Plasmas
electrical resistivity
augmentation

All Science Journal Classification (ASJC) codes

  • Chemical Engineering(all)
  • Materials Science(all)
  • Physical and Theoretical Chemistry
  • Electrochemistry
  • Electrical and Electronic Engineering

Cite this

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title = "Low operation voltage of nitride-based LEDs with Al-doped ZnO transparent contact layer",
abstract = "We have developed nitride-based multiquantum well light-emitting diodes (LEDs) with E-beam evaporated Al-doped ZnO (AZO) transparent contact layers (TCLs). With 20 mA injection current, it was found that forward voltages were 3.32, 3.33, and 4.91 V, while output powers were 10.1, 11.8, and 6.0 mW for the indium-tin-oxide LED, E-beam evaporated AZO LED, and sputter-evaporated AZO LED, respectively. The low operation voltage of the E-beam evaporated AZO LED is attributed to the deposition of low-resistivity TCLs, and the elimination of plasma damage in the p-GaN layer is attributed to use of the E-beam evaporated AZO. The high output power of the E-beam evaporated AZO LED is due to the enhancement of light extraction resulting from the high refractive index of AZO TCL.",
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Low operation voltage of nitride-based LEDs with Al-doped ZnO transparent contact layer. / Kuo, C. H.; Yeh, C. L.; Chen, P. H.; Lai, Wei-Chi; Tun, C. J.; Sheu, Jinn-Kong; Chi, G. C.

In: Electrochemical and Solid-State Letters, Vol. 11, No. 9, 04.08.2008.

Research output: Contribution to journalArticle

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AU - Kuo, C. H.

AU - Yeh, C. L.

AU - Chen, P. H.

AU - Lai, Wei-Chi

AU - Tun, C. J.

AU - Sheu, Jinn-Kong

AU - Chi, G. C.

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AB - We have developed nitride-based multiquantum well light-emitting diodes (LEDs) with E-beam evaporated Al-doped ZnO (AZO) transparent contact layers (TCLs). With 20 mA injection current, it was found that forward voltages were 3.32, 3.33, and 4.91 V, while output powers were 10.1, 11.8, and 6.0 mW for the indium-tin-oxide LED, E-beam evaporated AZO LED, and sputter-evaporated AZO LED, respectively. The low operation voltage of the E-beam evaporated AZO LED is attributed to the deposition of low-resistivity TCLs, and the elimination of plasma damage in the p-GaN layer is attributed to use of the E-beam evaporated AZO. The high output power of the E-beam evaporated AZO LED is due to the enhancement of light extraction resulting from the high refractive index of AZO TCL.

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