Low-power and low-voltage fully parallel content-addressable memory

Chi Sheng Lin, Kuan Hua Chen, Bin Da Liu

Research output: Contribution to journalConference articlepeer-review

9 Citations (Scopus)

Abstract

This paper presents a novel VLSI architecture for a fully parallel static type content addressable memory with low-power, low-voltage, and high-reliability features. In this paper, the proposed CAM word structure adopts static pseudo nMOS circuit that not only improves system reliability, but also prevents using clock signal to drive overall system. In order to reduce static power occurred in the proposed CAM word structure, a precomputation approach is used to turn off majority part of pseudo nMOS circuits. The whole design was simulated by HSPICE with the TSMC 0.35 μm SPQM CMOS process. With a 128 words by 30 bits CAM size, the simulation results indicate that the proposed circuit operates up to 250 MHz with the power-performance metric less than 59 fJ/bit/search.

Original languageEnglish
Pages (from-to)V373-V376
JournalProceedings - IEEE International Symposium on Circuits and Systems
Volume5
Publication statusPublished - 2003
EventProceedings of the 2003 IEEE International Symposium on Circuits and Systems - Bangkok, Thailand
Duration: 2003 May 252003 May 28

All Science Journal Classification (ASJC) codes

  • Electrical and Electronic Engineering

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