Low-power MRAM for nonvolatile electronics: Electric field control and spin-orbit torques

Pedram Khalili Amiri, Kang L. Wang

Research output: Chapter in Book/Report/Conference proceedingConference contribution

7 Citations (Scopus)

Abstract

We review recent results and discuss challenges and prospects of nonvolatile magnetic random access memory (MRAM). In particular, we will focus on recent developments in magnetoelectric memory (MeRAM), where electric field control is used to replace existing current-controlled write mechanisms to achieve lower power dissipation and higher density. We will discuss scaling trends and prototype crossbar MeRAM demonstrations. We will also discuss the use of spin-orbit torque (SOT) effects for writing with reduced switching currents.

Original languageEnglish
Title of host publication2014 IEEE 6th International Memory Workshop, IMW 2014
PublisherIEEE Computer Society
ISBN (Print)9781479935949
DOIs
Publication statusPublished - 2014
Event2014 IEEE 6th International Memory Workshop, IMW 2014 - Taipei, Taiwan
Duration: 2014 May 182014 May 21

Publication series

Name2014 IEEE 6th International Memory Workshop, IMW 2014

Conference

Conference2014 IEEE 6th International Memory Workshop, IMW 2014
CountryTaiwan
CityTaipei
Period14-05-1814-05-21

All Science Journal Classification (ASJC) codes

  • Software

Fingerprint Dive into the research topics of 'Low-power MRAM for nonvolatile electronics: Electric field control and spin-orbit torques'. Together they form a unique fingerprint.

Cite this