TY - GEN
T1 - Low-power MRAM for nonvolatile electronics
T2 - 2014 IEEE 6th International Memory Workshop, IMW 2014
AU - Amiri, Pedram Khalili
AU - Wang, Kang L.
N1 - Copyright:
Copyright 2014 Elsevier B.V., All rights reserved.
PY - 2014
Y1 - 2014
N2 - We review recent results and discuss challenges and prospects of nonvolatile magnetic random access memory (MRAM). In particular, we will focus on recent developments in magnetoelectric memory (MeRAM), where electric field control is used to replace existing current-controlled write mechanisms to achieve lower power dissipation and higher density. We will discuss scaling trends and prototype crossbar MeRAM demonstrations. We will also discuss the use of spin-orbit torque (SOT) effects for writing with reduced switching currents.
AB - We review recent results and discuss challenges and prospects of nonvolatile magnetic random access memory (MRAM). In particular, we will focus on recent developments in magnetoelectric memory (MeRAM), where electric field control is used to replace existing current-controlled write mechanisms to achieve lower power dissipation and higher density. We will discuss scaling trends and prototype crossbar MeRAM demonstrations. We will also discuss the use of spin-orbit torque (SOT) effects for writing with reduced switching currents.
UR - http://www.scopus.com/inward/record.url?scp=84904680119&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=84904680119&partnerID=8YFLogxK
U2 - 10.1109/IMW.2014.6849352
DO - 10.1109/IMW.2014.6849352
M3 - Conference contribution
AN - SCOPUS:84904680119
SN - 9781479935949
T3 - 2014 IEEE 6th International Memory Workshop, IMW 2014
BT - 2014 IEEE 6th International Memory Workshop, IMW 2014
PB - IEEE Computer Society
Y2 - 18 May 2014 through 21 May 2014
ER -