A new low pressure process for the growth of GaAs using triethylgallium (TEG) and a solid elemental arsenic source has been demonstrated. GaAs epitaxial layers with specular surface morphology have been obtained. N-type background free carrier concentrations on the order of 5 x 1016 cm-3 with room temperature mobilities around 4500 cm2/V/s are measured in these samples. The ability to grow GaAs epi layers with good surface morphology using a solid elemental arsenic source makes it more acceptable as a relatively safe industrial production process.
All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Renewable Energy, Sustainability and the Environment
- Surfaces, Coatings and Films
- Materials Chemistry