Low Pressure OMVPE Growth of GaAs Using a Solid Elemental Arsenic Source and TEG

Y. Tzeng; W. Jeske; C. C. Tong; S. Langford

doi:10.1149/1.2095636

Low Pressure OMVPE Growth of GaAs Using a Solid Elemental Arsenic Source and TEG

Y. Tzeng, W. Jeske, C. C. Tong, S. Langford

Research output: Contribution to journal › Article › peer-review

7 Citations (Scopus)

Abstract

A new low pressure process for the growth of GaAs using triethylgallium (TEG) and a solid elemental arsenic source has been demonstrated. GaAs epitaxial layers with specular surface morphology have been obtained. N-type background free carrier concentrations on the order of 5 x 10¹⁶ cm^-3 with room temperature mobilities around 4500 cm²/V/s are measured in these samples. The ability to grow GaAs epi layers with good surface morphology using a solid elemental arsenic source makes it more acceptable as a relatively safe industrial production process.

Original language	English
Pages (from-to)	452-455
Number of pages	4
Journal	Journal of the Electrochemical Society
Volume	135
Issue number	2
DOIs	https://doi.org/10.1149/1.2095636
Publication status	Published - 1988 Feb

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Renewable Energy, Sustainability and the Environment
Surfaces, Coatings and Films
Electrochemistry
Materials Chemistry

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This output contributes to the following UN Sustainable Development Goals (SDGs)

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10.1149/1.2095636

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abstract = "A new low pressure process for the growth of GaAs using triethylgallium (TEG) and a solid elemental arsenic source has been demonstrated. GaAs epitaxial layers with specular surface morphology have been obtained. N-type background free carrier concentrations on the order of 5 x 1016 cm-3 with room temperature mobilities around 4500 cm2/V/s are measured in these samples. The ability to grow GaAs epi layers with good surface morphology using a solid elemental arsenic source makes it more acceptable as a relatively safe industrial production process.",

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AU - Tong, C. C.

AU - Langford, S.

PY - 1988/2

Y1 - 1988/2

N2 - A new low pressure process for the growth of GaAs using triethylgallium (TEG) and a solid elemental arsenic source has been demonstrated. GaAs epitaxial layers with specular surface morphology have been obtained. N-type background free carrier concentrations on the order of 5 x 1016 cm-3 with room temperature mobilities around 4500 cm2/V/s are measured in these samples. The ability to grow GaAs epi layers with good surface morphology using a solid elemental arsenic source makes it more acceptable as a relatively safe industrial production process.

AB - A new low pressure process for the growth of GaAs using triethylgallium (TEG) and a solid elemental arsenic source has been demonstrated. GaAs epitaxial layers with specular surface morphology have been obtained. N-type background free carrier concentrations on the order of 5 x 1016 cm-3 with room temperature mobilities around 4500 cm2/V/s are measured in these samples. The ability to grow GaAs epi layers with good surface morphology using a solid elemental arsenic source makes it more acceptable as a relatively safe industrial production process.

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ER -

Low Pressure OMVPE Growth of GaAs Using a Solid Elemental Arsenic Source and TEG

Abstract

All Science Journal Classification (ASJC) codes

UN SDGs

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