Low Pressure OMVPE Growth of GaAs Using a Solid Elemental Arsenic Source and TEG

Y. Tzeng, W. Jeske, C. C. Tong, S. Langford

Research output: Contribution to journalArticle

6 Citations (Scopus)

Abstract

A new low pressure process for the growth of GaAs using triethylgallium (TEG) and a solid elemental arsenic source has been demonstrated. GaAs epitaxial layers with specular surface morphology have been obtained. N-type background free carrier concentrations on the order of 5 x 1016 cm-3 with room temperature mobilities around 4500 cm2/V/s are measured in these samples. The ability to grow GaAs epi layers with good surface morphology using a solid elemental arsenic source makes it more acceptable as a relatively safe industrial production process.

Original languageEnglish
Pages (from-to)452-455
Number of pages4
JournalJournal of the Electrochemical Society
Volume135
Issue number2
DOIs
Publication statusPublished - 1988 Feb

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Renewable Energy, Sustainability and the Environment
  • Surfaces, Coatings and Films
  • Electrochemistry
  • Materials Chemistry

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