Low resistance bilayer Nd/Al ohmic contacts on n-type GaN

Ching Ting Lee; Ming Yuan Yeh; Chang Da Tsai; Yen Tang Lyu

doi:10.1007/s11664-997-0161-1

Low resistance bilayer Nd/Al ohmic contacts on n-type GaN

Ching Ting Lee, Ming Yuan Yeh, Chang Da Tsai, Yen Tang Lyu

Department of Photonics

Research output: Contribution to journal › Article › peer-review

35 Citations (Scopus)

Abstract

A bilayer Nd/Al metallization structure has been deposited onto low pressure organometallic vapor phase epitaxy grown n-type GaN (1 × 10¹⁸ cm^-3) by electron-beam evaporation. Ohmic metal contacts were patterned photolithographically for standard transmission line measurement, and then thermally annealed at temperatures ranging from 200 to 350°C and from 500 to 650°C using conventional thermal annealing (CTA) and rapid thermal annealing (RTA), respectively. The lowest values for the specify contact resistivity of 9.8 × 10^-6Ω-Cm² and 8 × 10^-6 Ω-cm² were obtained using Nd/Al metallization with CTA of 250°C for 5 min and RTA of 600°C for 30 s. Examination of the surface morphology using atomic force microscopy as a function of annealing temperature revealed that the surface roughness was strongly influenced by conventional thermal annealing, it was smooth in the temperature range from 550 to 650°C for rapid thermal annealing. Auger electron spectroscopy depth profiling was employed to investigate the metallurgy and interdiffusion of contact formation.

Original language	English
Pages (from-to)	262-265
Number of pages	4
Journal	Journal of Electronic Materials
Volume	26
Issue number	3
DOIs	https://doi.org/10.1007/s11664-997-0161-1
Publication status	Published - 1997 Mar

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Electrical and Electronic Engineering
Materials Chemistry

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10.1007/s11664-997-0161-1

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@article{4fbe83c46847462ca197136e11125191,

title = "Low resistance bilayer Nd/Al ohmic contacts on n-type GaN",

abstract = "A bilayer Nd/Al metallization structure has been deposited onto low pressure organometallic vapor phase epitaxy grown n-type GaN (1 × 1018 cm-3) by electron-beam evaporation. Ohmic metal contacts were patterned photolithographically for standard transmission line measurement, and then thermally annealed at temperatures ranging from 200 to 350°C and from 500 to 650°C using conventional thermal annealing (CTA) and rapid thermal annealing (RTA), respectively. The lowest values for the specify contact resistivity of 9.8 × 10-6Ω-Cm2 and 8 × 10-6 Ω-cm2 were obtained using Nd/Al metallization with CTA of 250°C for 5 min and RTA of 600°C for 30 s. Examination of the surface morphology using atomic force microscopy as a function of annealing temperature revealed that the surface roughness was strongly influenced by conventional thermal annealing, it was smooth in the temperature range from 550 to 650°C for rapid thermal annealing. Auger electron spectroscopy depth profiling was employed to investigate the metallurgy and interdiffusion of contact formation.",

author = "Lee, {Ching Ting} and Yeh, {Ming Yuan} and Tsai, {Chang Da} and Lyu, {Yen Tang}",

note = "Funding Information: We would like to acknowledge professor M.S. Feng of Institute of Materials Science and Engineering, National Chiao Tung University for the providing of GaN samples. The assistance and useful discussion of professor G.C. Chi, Department of Physics, National Central University is also gratefully acknowledged. The authors would like to thank the National Science Council of the Republic of China under contract No. NSC84-2215-E-008-029 for financial support of this work. The authors thank the reviewers for their valuable comments.",

year = "1997",

month = mar,

doi = "10.1007/s11664-997-0161-1",

language = "English",

volume = "26",

pages = "262--265",

journal = "Journal of Electronic Materials",

issn = "0361-5235",

publisher = "Springer New York",

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TY - JOUR

T1 - Low resistance bilayer Nd/Al ohmic contacts on n-type GaN

AU - Lee, Ching Ting

AU - Yeh, Ming Yuan

AU - Tsai, Chang Da

AU - Lyu, Yen Tang

N1 - Funding Information: We would like to acknowledge professor M.S. Feng of Institute of Materials Science and Engineering, National Chiao Tung University for the providing of GaN samples. The assistance and useful discussion of professor G.C. Chi, Department of Physics, National Central University is also gratefully acknowledged. The authors would like to thank the National Science Council of the Republic of China under contract No. NSC84-2215-E-008-029 for financial support of this work. The authors thank the reviewers for their valuable comments.

PY - 1997/3

Y1 - 1997/3

N2 - A bilayer Nd/Al metallization structure has been deposited onto low pressure organometallic vapor phase epitaxy grown n-type GaN (1 × 1018 cm-3) by electron-beam evaporation. Ohmic metal contacts were patterned photolithographically for standard transmission line measurement, and then thermally annealed at temperatures ranging from 200 to 350°C and from 500 to 650°C using conventional thermal annealing (CTA) and rapid thermal annealing (RTA), respectively. The lowest values for the specify contact resistivity of 9.8 × 10-6Ω-Cm2 and 8 × 10-6 Ω-cm2 were obtained using Nd/Al metallization with CTA of 250°C for 5 min and RTA of 600°C for 30 s. Examination of the surface morphology using atomic force microscopy as a function of annealing temperature revealed that the surface roughness was strongly influenced by conventional thermal annealing, it was smooth in the temperature range from 550 to 650°C for rapid thermal annealing. Auger electron spectroscopy depth profiling was employed to investigate the metallurgy and interdiffusion of contact formation.

AB - A bilayer Nd/Al metallization structure has been deposited onto low pressure organometallic vapor phase epitaxy grown n-type GaN (1 × 1018 cm-3) by electron-beam evaporation. Ohmic metal contacts were patterned photolithographically for standard transmission line measurement, and then thermally annealed at temperatures ranging from 200 to 350°C and from 500 to 650°C using conventional thermal annealing (CTA) and rapid thermal annealing (RTA), respectively. The lowest values for the specify contact resistivity of 9.8 × 10-6Ω-Cm2 and 8 × 10-6 Ω-cm2 were obtained using Nd/Al metallization with CTA of 250°C for 5 min and RTA of 600°C for 30 s. Examination of the surface morphology using atomic force microscopy as a function of annealing temperature revealed that the surface roughness was strongly influenced by conventional thermal annealing, it was smooth in the temperature range from 550 to 650°C for rapid thermal annealing. Auger electron spectroscopy depth profiling was employed to investigate the metallurgy and interdiffusion of contact formation.

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Low resistance bilayer Nd/Al ohmic contacts on n-type GaN

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