Low-resistance Ni/Au ohmic contact to Mg-doped of Al0.15Ga0.85N/GaN superlattices

C. H. Kuo, Jinn-Kong Sheu, G. C. Chi, Y. L. Huang, T. W. Yeh

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13 Citations (Scopus)

Abstract

Electrical properties of Ni (6 nm)/Au (14 nm) contacts to Mg-doped strained layer Al0.15Ga0.85N/GaN superlattices have been analyzed. The hole concentration and mobility are around 1 × 1018 cm-3 and 10 cm2/Vs, respectively. Hall effect measurements for this structure show a high conductivity that the high activation efficiency of Mg is due to the strain-induced piezoelectric field. The temperature-dependence resistivity result suggested that high-hole concentration can enhance tunneling transport for field emission and thereby reducing the contact resistance of metal-semiconductor interface. Before thermal alloying, the current-voltage (I-V) characteristic of Ni/Au contact on p-type Al0.15Ga0.85N/GaN SLs shows non-ohmic behavior. As the alloying temperature increases to 600°C, the I-V curve shows a characteristic of ohmic contact. A specific contact resistance as low as 4.0 × 10-6 Ω cm2 was obtained at alloying temperature of 650°C for 5 min in N2 ambient.

Original languageEnglish
Pages (from-to)717-720
Number of pages4
JournalSolid-State Electronics
Volume45
Issue number5
DOIs
Publication statusPublished - 2001 May 1

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

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