Low resistive ohmic contact formation on surface treated-n-GaN alloyed at low temperature

Y. J. Lin; H. Y. Lee; F. T. Hwang; C. T. Lee

doi:10.1007/s11664-001-0094-z

Low resistive ohmic contact formation on surface treated-n-GaN alloyed at low temperature

Y. J. Lin, H. Y. Lee, F. T. Hwang, C. T. Lee

Department of Photonics

Research output: Contribution to journal › Article › peer-review

28 Citations (Scopus)

Abstract

Ohmic contacts to n-type GaN with low contact resistance were developed by (NH₄)₂S_x and KOH+(NH₄)₂S_x surface treatments prior to Ti/Al metal deposition. The lowest specific contact resistance of 3.0 × 10^-6 Ω-cm² was obtained for Ti/Al contacts in an (NH₄)₂S_x-treated GaN layer alloyed at 300°C for 3 min. To obtain the lowest specific contact resistance for a low temperature alloy, the (NH₄)₂S_x treatment conditions for both (NH₄)₂S_x and KOH+(NH₄)₂S_x-treated n-GaN layers have been investigated and the mechanism for ohmic formation in low temperature alloys analyzed.

Original language	English
Pages (from-to)	532-537
Number of pages	6
Journal	Journal of Electronic Materials
Volume	30
Issue number	5
DOIs	https://doi.org/10.1007/s11664-001-0094-z
Publication status	Published - 2001 May

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Electrical and Electronic Engineering
Materials Chemistry

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10.1007/s11664-001-0094-z

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title = "Low resistive ohmic contact formation on surface treated-n-GaN alloyed at low temperature",

abstract = "Ohmic contacts to n-type GaN with low contact resistance were developed by (NH4)2Sx and KOH+(NH4)2Sx surface treatments prior to Ti/Al metal deposition. The lowest specific contact resistance of 3.0 × 10-6 Ω-cm2 was obtained for Ti/Al contacts in an (NH4)2Sx-treated GaN layer alloyed at 300°C for 3 min. To obtain the lowest specific contact resistance for a low temperature alloy, the (NH4)2Sx treatment conditions for both (NH4)2Sx and KOH+(NH4)2Sx-treated n-GaN layers have been investigated and the mechanism for ohmic formation in low temperature alloys analyzed.",

author = "Lin, {Y. J.} and Lee, {H. Y.} and Hwang, {F. T.} and Lee, {C. T.}",

note = "Funding Information: The authors are indebted to the support of the Opto Tech Corporation and the National Science Council of the Republic of China.",

year = "2001",

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doi = "10.1007/s11664-001-0094-z",

language = "English",

volume = "30",

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journal = "Journal of Electronic Materials",

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publisher = "Springer New York",

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T1 - Low resistive ohmic contact formation on surface treated-n-GaN alloyed at low temperature

AU - Lin, Y. J.

AU - Lee, H. Y.

AU - Hwang, F. T.

AU - Lee, C. T.

N1 - Funding Information: The authors are indebted to the support of the Opto Tech Corporation and the National Science Council of the Republic of China.

PY - 2001/5

Y1 - 2001/5

N2 - Ohmic contacts to n-type GaN with low contact resistance were developed by (NH4)2Sx and KOH+(NH4)2Sx surface treatments prior to Ti/Al metal deposition. The lowest specific contact resistance of 3.0 × 10-6 Ω-cm2 was obtained for Ti/Al contacts in an (NH4)2Sx-treated GaN layer alloyed at 300°C for 3 min. To obtain the lowest specific contact resistance for a low temperature alloy, the (NH4)2Sx treatment conditions for both (NH4)2Sx and KOH+(NH4)2Sx-treated n-GaN layers have been investigated and the mechanism for ohmic formation in low temperature alloys analyzed.

AB - Ohmic contacts to n-type GaN with low contact resistance were developed by (NH4)2Sx and KOH+(NH4)2Sx surface treatments prior to Ti/Al metal deposition. The lowest specific contact resistance of 3.0 × 10-6 Ω-cm2 was obtained for Ti/Al contacts in an (NH4)2Sx-treated GaN layer alloyed at 300°C for 3 min. To obtain the lowest specific contact resistance for a low temperature alloy, the (NH4)2Sx treatment conditions for both (NH4)2Sx and KOH+(NH4)2Sx-treated n-GaN layers have been investigated and the mechanism for ohmic formation in low temperature alloys analyzed.

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JO - Journal of Electronic Materials

JF - Journal of Electronic Materials

IS - 5

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Low resistive ohmic contact formation on surface treated-n-GaN alloyed at low temperature

Abstract

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