Low subthreshold swing InGaZnO thin film transistors with UV-Ozone-Treated BaTi03 dielectric layers

Huei Yu Liou, An Hsiu Cheng, Sheng-Yuan Chu

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

We developed a method to improve the electrical performance of amorphous BaTiO3 thin film by UV-ozone treatment. The treatment promoted densification of the dielectric layer by decreasing oxygen-vacancy and increasing metal-oxide bonds. The InGaZnO-TFTs exhibited high on/off ratio of 1.46 ∗ 107 and the low sub-threshold swing of 0.069 V/dec.

Original languageEnglish
Title of host publication23rd International Display Workshops in conjunction with Asia Display, IDW/AD 2016
PublisherSociety for Information Display
Pages882-885
Number of pages4
Volume2
ISBN (Electronic)9781510845510
Publication statusPublished - 2016 Jan 1
Event23rd International Display Workshops in conjunction with Asia Display, IDW/AD 2016 - Fukuoka, Japan
Duration: 2016 Dec 72016 Dec 9

Other

Other23rd International Display Workshops in conjunction with Asia Display, IDW/AD 2016
CountryJapan
CityFukuoka
Period16-12-0716-12-09

Fingerprint

Ozone
Amorphous films
Oxygen vacancies
Thin film transistors
Densification
Oxides
Metals
Thin films

All Science Journal Classification (ASJC) codes

  • Hardware and Architecture
  • Human-Computer Interaction
  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

Cite this

Liou, H. Y., Cheng, A. H., & Chu, S-Y. (2016). Low subthreshold swing InGaZnO thin film transistors with UV-Ozone-Treated BaTi03 dielectric layers. In 23rd International Display Workshops in conjunction with Asia Display, IDW/AD 2016 (Vol. 2, pp. 882-885). Society for Information Display.
Liou, Huei Yu ; Cheng, An Hsiu ; Chu, Sheng-Yuan. / Low subthreshold swing InGaZnO thin film transistors with UV-Ozone-Treated BaTi03 dielectric layers. 23rd International Display Workshops in conjunction with Asia Display, IDW/AD 2016. Vol. 2 Society for Information Display, 2016. pp. 882-885
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abstract = "We developed a method to improve the electrical performance of amorphous BaTiO3 thin film by UV-ozone treatment. The treatment promoted densification of the dielectric layer by decreasing oxygen-vacancy and increasing metal-oxide bonds. The InGaZnO-TFTs exhibited high on/off ratio of 1.46 ∗ 107 and the low sub-threshold swing of 0.069 V/dec.",
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Liou, HY, Cheng, AH & Chu, S-Y 2016, Low subthreshold swing InGaZnO thin film transistors with UV-Ozone-Treated BaTi03 dielectric layers. in 23rd International Display Workshops in conjunction with Asia Display, IDW/AD 2016. vol. 2, Society for Information Display, pp. 882-885, 23rd International Display Workshops in conjunction with Asia Display, IDW/AD 2016, Fukuoka, Japan, 16-12-07.

Low subthreshold swing InGaZnO thin film transistors with UV-Ozone-Treated BaTi03 dielectric layers. / Liou, Huei Yu; Cheng, An Hsiu; Chu, Sheng-Yuan.

23rd International Display Workshops in conjunction with Asia Display, IDW/AD 2016. Vol. 2 Society for Information Display, 2016. p. 882-885.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

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Liou HY, Cheng AH, Chu S-Y. Low subthreshold swing InGaZnO thin film transistors with UV-Ozone-Treated BaTi03 dielectric layers. In 23rd International Display Workshops in conjunction with Asia Display, IDW/AD 2016. Vol. 2. Society for Information Display. 2016. p. 882-885