Low subthreshold swing InGaZnO thin film transistors with UV-ozone-treated BaTiO3 dielectric layers

Huei Yu Liou, An Hsiu Cheng, Sheng Yuan Chu

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

We developed a method to improve the electrical performance of amorphous BaTiO3 thin film by UV-ozone treatment. The treatment promoted densification of the dielectric layer by decreasing oxygen-vacancy and increasing metal-oxide bonds. The InGaZnO-TFTs exhibited high on/off ratio of 1.46 × 107 and the low sub-threshold swing of 0.069 V/dec.

Original languageEnglish
Title of host publication23rd International Display Workshops in conjunction with Asia Display, IDW/AD 2016
PublisherSociety for Information Display
Pages134-137
Number of pages4
ISBN (Electronic)9781510845510
Publication statusPublished - 2016 Jan 1
Event23rd International Display Workshops in conjunction with Asia Display, IDW/AD 2016 - Fukuoka, Japan
Duration: 2016 Dec 72016 Dec 9

Publication series

Name23rd International Display Workshops in conjunction with Asia Display, IDW/AD 2016
Volume1

Other

Other23rd International Display Workshops in conjunction with Asia Display, IDW/AD 2016
CountryJapan
CityFukuoka
Period16-12-0716-12-09

All Science Journal Classification (ASJC) codes

  • Hardware and Architecture
  • Human-Computer Interaction
  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

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  • Cite this

    Liou, H. Y., Cheng, A. H., & Chu, S. Y. (2016). Low subthreshold swing InGaZnO thin film transistors with UV-ozone-treated BaTiO3 dielectric layers. In 23rd International Display Workshops in conjunction with Asia Display, IDW/AD 2016 (pp. 134-137). (23rd International Display Workshops in conjunction with Asia Display, IDW/AD 2016; Vol. 1). Society for Information Display.