Low temperature activation of Mg-doped GaN in O2 ambient

Cheng Huang Kuo; Shoou Jinn Chang; Yan Kuin Su; Liang Wen Wu; Jinn Kong Sheu; Chin Hsiang Chen; Gou Chung Chi

doi:10.1143/JJAP.41.L112

Low temperature activation of Mg-doped GaN in O₂ ambient

Cheng Huang Kuo, Shoou Jinn Chang, Yan Kuin Su, Liang Wen Wu, Jinn Kong Sheu, Chin Hsiang Chen, Gou Chung Chi

Research output: Contribution to journal › Article › peer-review

49 Citations (Scopus)

Abstract

In this study, Mg-doped GaN epitaxial layers were grown by metalorganic vapor phase epitaxy (MOVPE) and annealed in O₂, air and N₂. It was found that we could achieve a low-resistive p-type GaN by O₂-ambient annealing at a temperature as low as 400°C. The resistivity and hole concentration of the 400°C O₂-ambient annealed Mg-doped GaN was 2 Ω-cm and 3 × 10¹⁷ cm^-3, respectively. These values are equivalent to those values obtained from Mg-doped GaN annealed in N₂ ambient at 700°C.

Original language	English
Pages (from-to)	L112-L114
Journal	Japanese Journal of Applied Physics, Part 2: Letters
Volume	41
Issue number	2 A
DOIs	https://doi.org/10.1143/JJAP.41.L112
Publication status	Published - 2002 Feb 1

All Science Journal Classification (ASJC) codes

Engineering(all)
Physics and Astronomy (miscellaneous)
Physics and Astronomy(all)

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title = "Low temperature activation of Mg-doped GaN in O2 ambient",

abstract = "In this study, Mg-doped GaN epitaxial layers were grown by metalorganic vapor phase epitaxy (MOVPE) and annealed in O2, air and N2. It was found that we could achieve a low-resistive p-type GaN by O2-ambient annealing at a temperature as low as 400°C. The resistivity and hole concentration of the 400°C O2-ambient annealed Mg-doped GaN was 2 Ω-cm and 3 × 1017 cm-3, respectively. These values are equivalent to those values obtained from Mg-doped GaN annealed in N2 ambient at 700°C.",

author = "Kuo, {Cheng Huang} and Chang, {Shoou Jinn} and Su, {Yan Kuin} and Wu, {Liang Wen} and Sheu, {Jinn Kong} and Chen, {Chin Hsiang} and Chi, {Gou Chung}",

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T1 - Low temperature activation of Mg-doped GaN in O2 ambient

AU - Kuo, Cheng Huang

AU - Chang, Shoou Jinn

AU - Su, Yan Kuin

AU - Wu, Liang Wen

AU - Sheu, Jinn Kong

AU - Chen, Chin Hsiang

AU - Chi, Gou Chung

PY - 2002/2/1

Y1 - 2002/2/1

N2 - In this study, Mg-doped GaN epitaxial layers were grown by metalorganic vapor phase epitaxy (MOVPE) and annealed in O2, air and N2. It was found that we could achieve a low-resistive p-type GaN by O2-ambient annealing at a temperature as low as 400°C. The resistivity and hole concentration of the 400°C O2-ambient annealed Mg-doped GaN was 2 Ω-cm and 3 × 1017 cm-3, respectively. These values are equivalent to those values obtained from Mg-doped GaN annealed in N2 ambient at 700°C.

AB - In this study, Mg-doped GaN epitaxial layers were grown by metalorganic vapor phase epitaxy (MOVPE) and annealed in O2, air and N2. It was found that we could achieve a low-resistive p-type GaN by O2-ambient annealing at a temperature as low as 400°C. The resistivity and hole concentration of the 400°C O2-ambient annealed Mg-doped GaN was 2 Ω-cm and 3 × 1017 cm-3, respectively. These values are equivalent to those values obtained from Mg-doped GaN annealed in N2 ambient at 700°C.

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