Low-temperature and catalyst-free synthesis of well-aligned ZnO nanorods on Si (100)

Sai Chang Liu, Jih Jen Wu

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74 Citations (Scopus)


Well-aligned ZnO nanorods have been grown on Si (100) substrates using a simple, catalyst-free CVD method at low temperatures. Structural analyses show that the nanorods grown on Si (100) are preferentially oriented in the c-axis direction. An amorphous SiOx layer in the interface of ZnO nanorods and Si (100) is observed from the HRTEM and EELS images. The well-aligned ZnO nanorods exhibit a strong PL emission of 380 nm at room temperature. A negligible green band emission in the PL spectra indicates that there is a very low concentration of oxygen vacancies in the highly oriented ZnO nanorods. Diameter control of the well-aligned and high-quality ZnO nanorods on Si (100) substrates is achievable by varying the growth conditions.

Original languageEnglish
Pages (from-to)3125-3129
Number of pages5
JournalJournal of Materials Chemistry
Issue number10
Publication statusPublished - 2002 Oct 1

All Science Journal Classification (ASJC) codes

  • General Chemistry
  • Materials Chemistry


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