TY - GEN
T1 - Low temperature Au-Au bonding with VUV/O 3 treatment
AU - Okada, Akiko
AU - Nimura, Masatsugu
AU - Unami, Naoko
AU - Shigetou, Akitsu
AU - Noma, Hirokazu
AU - Sakuma, Katsuyuki
AU - Mizuno, Jun
AU - Shoji, Shuichi
PY - 2011
Y1 - 2011
N2 - This paper describes low temperature Au-Au bonding with vacuum ultraviolet (VUV) irradiation in the presence of oxygen gas. The VUV/O 3 treatment can remove organic contaminants of Au surfaces without damages. The Au surfaces after the VUV/O 3 treatment were analyzed by X-ray photoelectron spectroscopy (XPS) and atomic force microscopy (AFM). The results show that carbon-based contaminants were dramatically decreased and that there were no serious damages in Au surfaces by the VUV/O 3 treatment. The Au-Au bonding with VUV/O 3 treatment was achieved at 200 °C. The average of shear strength of about 80 MPa per unit area was obtained. Therefore, it was proved that VUV/O 3 treatment is effective in Au-Au bonding.
AB - This paper describes low temperature Au-Au bonding with vacuum ultraviolet (VUV) irradiation in the presence of oxygen gas. The VUV/O 3 treatment can remove organic contaminants of Au surfaces without damages. The Au surfaces after the VUV/O 3 treatment were analyzed by X-ray photoelectron spectroscopy (XPS) and atomic force microscopy (AFM). The results show that carbon-based contaminants were dramatically decreased and that there were no serious damages in Au surfaces by the VUV/O 3 treatment. The Au-Au bonding with VUV/O 3 treatment was achieved at 200 °C. The average of shear strength of about 80 MPa per unit area was obtained. Therefore, it was proved that VUV/O 3 treatment is effective in Au-Au bonding.
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U2 - 10.1109/3DIC.2012.6263015
DO - 10.1109/3DIC.2012.6263015
M3 - Conference contribution
AN - SCOPUS:84866877387
SN - 9781467321891
T3 - 2011 IEEE International 3D Systems Integration Conference, 3DIC 2011
BT - 2011 IEEE International 3D Systems Integration Conference, 3DIC 2011
T2 - 2011 IEEE International 3D Systems Integration Conference, 3DIC 2011
Y2 - 31 January 2012 through 2 February 2012
ER -