β-Ga2O3 nanowires have been synthesized at a low temperature of 550°C using a single precursor of gallium acetylacetonate through the vapor-liquid-solid (VLS) mechanism. Synthesis of very thin β-Ga2O3 nanowires with an average diameter of 8 nm was achieved using this method. The influences of substrate temperature, pressure, and Ga vapor concentration on the growth and the diameter distribution of β-Ga2O3 nanowires were investigated in this work. It was found that the diameters of the β-Ga2O 3 nanowires are also affected by the growth conditions, in addition to being correlated to the diameters of the initial Au catalysts on the substrates.
All Science Journal Classification (ASJC) codes
- Physical and Theoretical Chemistry
- Surfaces, Coatings and Films
- Materials Chemistry