Low-Temperature Catalytic Growth of β-Ga2O3 Nanowires Using Single Organometallic Precursor

Ko Wei Chang, Jih Jen Wu

Research output: Contribution to journalArticlepeer-review

21 Citations (Scopus)


β-Ga2O3 nanowires have been synthesized at a low temperature of 550°C using a single precursor of gallium acetylacetonate through the vapor-liquid-solid (VLS) mechanism. Synthesis of very thin β-Ga2O3 nanowires with an average diameter of 8 nm was achieved using this method. The influences of substrate temperature, pressure, and Ga vapor concentration on the growth and the diameter distribution of β-Ga2O3 nanowires were investigated in this work. It was found that the diameters of the β-Ga2O 3 nanowires are also affected by the growth conditions, in addition to being correlated to the diameters of the initial Au catalysts on the substrates.

Original languageEnglish
Pages (from-to)1838-1843
Number of pages6
JournalJournal of Physical Chemistry B
Issue number6
Publication statusPublished - 2004 Feb 12

All Science Journal Classification (ASJC) codes

  • Physical and Theoretical Chemistry
  • Surfaces, Coatings and Films
  • Materials Chemistry


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