Low-temperature electrical conductivity of LaNi1-xFexO3

Ashish Atma Chainani, D. D. Sarma, I. Das, E. V. Sampathkumaran

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40 Citations (Scopus)

Abstract

We report the electrical conductivity between 2 and 300 K for LaNi1-xFexO3 across the composition-controlled metal-insulator (m-i) transition. Using a method first suggested by Möbius, we identify the critical concentration xc to be 0.3 for the m-i transition. The negative temperature coefficient of resistivity observed at low temperatures in the metallic phase follows a temperature dependence characteristic of disorder effects. The semiconducting compositions (x ≥ 0.3) do not show a simple activation energy but exhibit variable-range hopping at high temperatures confirming that the m-i transition in this system is driven by increasing disorder effects.

Original languageEnglish
JournalJournal of Physics Condensed Matter
Volume8
Issue number43
DOIs
Publication statusPublished - 1996 Oct 21

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Condensed Matter Physics

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