Low-temperature formation of well-aligned nanocrystalline Si/SiO x composite nanowires

Te Chi Wong, Chi Chung Yu, Jih-Jen Wu

Research output: Contribution to journalArticlepeer-review

12 Citations (Scopus)


Well-aligned nanocrystalline (nc)-Si/SiO x composite nanowires have been deposited on various substrates at 120°C using SiCl 4 /H 2 in a hot-filament chemical vapor deposition reactor. Structural and compositional analyses reveal that silicon nano-crystals are embedded in the amorphous SiO x nanowires. The nc-Si/SiO x composite nanowires are transparent in the range 500-900 nm. Photoluminescence spectra of the nc-Si/SiO x composite nanowires have a broad emission band, ranging from 420 to 525 nm. Water vapor from the chamber wall plays a crucial role in the formation of the well-aligned nanowires. A possible mechanism for the formation of the composite nanowires is suggested.

Original languageEnglish
Pages (from-to)1440-1444
Number of pages5
JournalAdvanced Functional Materials
Issue number9
Publication statusPublished - 2005 Sep 1

All Science Journal Classification (ASJC) codes

  • Chemistry(all)
  • Materials Science(all)
  • Condensed Matter Physics

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