TY - JOUR
T1 - Low temperature growth and structural characterization of nanocrystalline silicon films
AU - Wong, Te Chi
AU - Yu, Chi Chung
AU - Wu, Jih Jen
N1 - Funding Information:
The authors would like to thank Dr. K.H. Chen for help on Raman measurement. The financial support of this work, by the National Science Council in Taiwan under Contract No. NSC 89-2214-E-006-052, is gratefully acknowledged.
PY - 2002/9
Y1 - 2002/9
N2 - Growth of nanocrystalline silicon films at substrate temperatures below 210°C using SiCl4/H2 in a hot-wire chemical vapor deposition (HW-CVD) reactor is reported here. Raman spectroscopy, X-ray diffraction (XRD) and transmission electron microscopy (TEM) were employed to investigate the microstructure of the silicon films. TEM analyses reveal that nanocrystalline silicon film with grain sizes in a range 7-10nm was deposited at a substrate temperature of 150°C. A 45-nm-thick amorphous interfacial layer was formed on the glass substrate prior to the nanocrystalline film. Raman scattering measurement determines that the deposition of nanocrystalline silicon film with a 90% crystalline fraction is achieved at 150°C. A nanocrystalline film with a 77% crystalline fraction is formed at a substrate temperature of 90°C. The advantages of this process and roles of Cl and H radicals in the formation of crystalline silicon films are discussed.
AB - Growth of nanocrystalline silicon films at substrate temperatures below 210°C using SiCl4/H2 in a hot-wire chemical vapor deposition (HW-CVD) reactor is reported here. Raman spectroscopy, X-ray diffraction (XRD) and transmission electron microscopy (TEM) were employed to investigate the microstructure of the silicon films. TEM analyses reveal that nanocrystalline silicon film with grain sizes in a range 7-10nm was deposited at a substrate temperature of 150°C. A 45-nm-thick amorphous interfacial layer was formed on the glass substrate prior to the nanocrystalline film. Raman scattering measurement determines that the deposition of nanocrystalline silicon film with a 90% crystalline fraction is achieved at 150°C. A nanocrystalline film with a 77% crystalline fraction is formed at a substrate temperature of 90°C. The advantages of this process and roles of Cl and H radicals in the formation of crystalline silicon films are discussed.
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U2 - 10.1016/S0022-0248(02)01538-5
DO - 10.1016/S0022-0248(02)01538-5
M3 - Article
AN - SCOPUS:0036724681
SN - 0022-0248
VL - 243
SP - 419
EP - 426
JO - Journal of Crystal Growth
JF - Journal of Crystal Growth
IS - 3-4
ER -