Low Temperature Growth Mechanism of GaN Crystal by Hydride Vapor Phase Epitaxy

Hai Ping Liu, In Gann Chen, Jenq Dar Tsay, Wen Yueh Liu, Yih Der Guo, Jung Tsung Hsu

Research output: Contribution to journalConference articlepeer-review


The low temperature growth of GaN crystal using epitaxy lateral overgrowth (ELO) on SiO2 dot pattern below 900°C by hydride vapor phase epitaxy (HVPE) have been studied. It is observed that the growth rate of GaN hexagonal pyramidal crystals along [11̄01] direction increases as growth temperature decreases. At low temperature of ∼ 850°C, hexagonal GaN columnar crystals with high index facet at the top can be observed. It is proposed that the surface diffusion length of precursors, such as NH 3 and GaCl, decreases at lower temperature that reduces the probability of desorption and increase the lifetime. The condensation of Ga liquid droplets on the GaN surface will change the relative stability of {11̄01} facet. Therefore, the formation of high index planes such as {112̄2} facet on the top of hexagonal column along with the formation of stacking fault on the (0001) plane can be observed. A detailed study of the effect of growth temperature on the crystal growth mechanism will be presented.

Original languageEnglish
Pages (from-to)29-37
Number of pages9
JournalMaterials Research Society Symposium - Proceedings
Publication statusPublished - 2003 Jan 1
EventMATERIALS RESEARCH SOCIETY SYMPOSIUM PROCEEDINGS: New Applications for Wide-Bandgap Semiconductors - San Francisco, CA, United States
Duration: 2003 Apr 222003 Apr 24

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering


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