Low-temperature growth of gallium nitride films by inductively coupled-plasma-enhanced reactive magnetron sputtering

Chih Jui Ni, Franklin Chau-Nan Hong

Research output: Contribution to journalArticlepeer-review

6 Citations (Scopus)

Abstract

Gallium nitride (GaN) films were grown on sapphire substrate by reactive magnetron sputtering. Inductively coupled-plasma (ICP) source was installed between the substrate holder and the sputtering target to increase the plasma density and the degree of ionization of nitrogen gas. Liquid Ga and Ar/N 2 were used as the sputtering target and sputtering gases, respectively. X-ray diffraction measurements confirmed that the authors could grow high quality GaN crystallites at 500°C. However, the crystalline GaN (0002) peak remained even by lowering the growth temperature down to 300°C. The N:Ga ratio of the film grown at 500°C was almost 1:1, and the nitrogen composition became higher toward the 1:1 N:Ga ratio with increasing the growth temperature. The high degree of ionization induced by ICP source was essential to the growth of high crystalline quality GaN films.

Original languageEnglish
Article number031514
JournalJournal of Vacuum Science and Technology A: Vacuum, Surfaces and Films
Volume32
Issue number3
DOIs
Publication statusPublished - 2014 Jan 1

All Science Journal Classification (ASJC) codes

  • Condensed Matter Physics
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films

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