Low temperature growth of graphene on glass by carbon-enclosed chemical vapor deposition process and its application as transparent electrode

Yu Ze Chen, Henry Medina, Hung Wei Tsai, Yi Chung Wang, Yu Ting Yen, Arumugam Manikandan, Yu Lun Chueh

Research output: Contribution to journalArticlepeer-review

32 Citations (Scopus)

Abstract

A novel carbon-enclosed chemical vapor deposition (CE-CVD) to grow high quality monolayer graphene on Cu substrate at a low temperature of 500 °C was demonstrated. The quality of the grown graphene was investigated by Raman spectra, and the detailed growth mechanism of high quality graphene by the CE-CVD process was investigated in detail. In addition to growth of high quality monolayer graphene, a transparent hybrid few-layer graphene/CuNi mesh electrode directly synthesized by the CE-CVD process on a conventional glass substrate at the temperature of 500°C was demonstrated, showing excellent electrical properties (∼5 ω/ @ 93.5% transparency) and ready to be used for optical applications without further transfer process. The few-layer graphene/CuNi mesh electrode shows no electrical degradation even after 2 h annealing in pure oxygen at an elevated temperature of ∼300°C. Furthermore, the few-layer graphene/CuNi mesh electrode delivers an excellent corrosion resistance in highly corrosive solutions such as electroplating process and achieves a good nucleation rate for the deposited film. Findings suggest that the low temperature few-layer graphene/CuNi mesh electrode synthesized by the CE-CVD process is an excellent candidate to replace indium tin oxide (ITO) as transparent conductive material (TCM) in the next generation.

Original languageEnglish
Pages (from-to)1646-1655
Number of pages10
JournalChemistry of Materials
Volume27
Issue number5
DOIs
Publication statusPublished - 2015 Mar 10

All Science Journal Classification (ASJC) codes

  • Chemistry(all)
  • Chemical Engineering(all)
  • Materials Chemistry

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