Low temperature growth of polycrystalline silicon films by hot-wire chemical vapor deposition using SiCl4/H2 gases

Te Chi Wong, Jih Jen Wu

Research output: Contribution to journalLetterpeer-review

9 Citations (Scopus)

Abstract

Low-temperature growth of polycrystalline silicon films using SiCl4/H2 in a hot-wire chemical vapor deposition (HWCVD) reactor is reported here. Slightly (100) oriented polycrystalline silicon film with a crystalline fraction of 97% has been deposited at a hot wire temperature of 1900°C and a substrate temperature of 320°C. The average grain size of the film is 0.1 μm with a thickness of 0.5 μm. (110) Preferentially orientated silicon film with a 97% crystalline fraction is also deposited at a hot wire temperature of 1700°C and a substrate temperature of 290°C. A nanocrystalline film with a 57% crystalline fraction is formed when the substrate temperature is lowered to 150°C. The roles of Cl and H radicals in the formation of crystalline silicon films are discussed.

Original languageEnglish
Pages (from-to)L1207-L1210
JournalJapanese Journal of Applied Physics, Part 2: Letters
Volume40
Issue number11 B
DOIs
Publication statusPublished - 2001 Nov 15

All Science Journal Classification (ASJC) codes

  • Engineering(all)
  • Physics and Astronomy (miscellaneous)
  • Physics and Astronomy(all)

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