Abstract
Low-temperature growth of polycrystalline silicon films using SiCl4/H2 in a hot-wire chemical vapor deposition (HWCVD) reactor is reported here. Slightly (100) oriented polycrystalline silicon film with a crystalline fraction of 97% has been deposited at a hot wire temperature of 1900°C and a substrate temperature of 320°C. The average grain size of the film is 0.1 μm with a thickness of 0.5 μm. (110) Preferentially orientated silicon film with a 97% crystalline fraction is also deposited at a hot wire temperature of 1700°C and a substrate temperature of 290°C. A nanocrystalline film with a 57% crystalline fraction is formed when the substrate temperature is lowered to 150°C. The roles of Cl and H radicals in the formation of crystalline silicon films are discussed.
| Original language | English |
|---|---|
| Pages (from-to) | L1207-L1210 |
| Journal | Japanese Journal of Applied Physics, Part 2: Letters |
| Volume | 40 |
| Issue number | 11 B |
| Publication status | Published - 2001 Nov 15 |
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All Science Journal Classification (ASJC) codes
- Engineering(all)
- Physics and Astronomy (miscellaneous)
- Physics and Astronomy(all)
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Low temperature growth of polycrystalline silicon films by hot-wire chemical vapor deposition using SiCl4/H2 gases. / Wong, Te Chi; Wu, Jih Jen.
In: Japanese Journal of Applied Physics, Part 2: Letters, Vol. 40, No. 11 B, 15.11.2001, p. L1207-L1210.Research output: Contribution to journal › Letter
TY - JOUR
T1 - Low temperature growth of polycrystalline silicon films by hot-wire chemical vapor deposition using SiCl4/H2 gases
AU - Wong, Te Chi
AU - Wu, Jih Jen
PY - 2001/11/15
Y1 - 2001/11/15
N2 - Low-temperature growth of polycrystalline silicon films using SiCl4/H2 in a hot-wire chemical vapor deposition (HWCVD) reactor is reported here. Slightly (100) oriented polycrystalline silicon film with a crystalline fraction of 97% has been deposited at a hot wire temperature of 1900°C and a substrate temperature of 320°C. The average grain size of the film is 0.1 μm with a thickness of 0.5 μm. (110) Preferentially orientated silicon film with a 97% crystalline fraction is also deposited at a hot wire temperature of 1700°C and a substrate temperature of 290°C. A nanocrystalline film with a 57% crystalline fraction is formed when the substrate temperature is lowered to 150°C. The roles of Cl and H radicals in the formation of crystalline silicon films are discussed.
AB - Low-temperature growth of polycrystalline silicon films using SiCl4/H2 in a hot-wire chemical vapor deposition (HWCVD) reactor is reported here. Slightly (100) oriented polycrystalline silicon film with a crystalline fraction of 97% has been deposited at a hot wire temperature of 1900°C and a substrate temperature of 320°C. The average grain size of the film is 0.1 μm with a thickness of 0.5 μm. (110) Preferentially orientated silicon film with a 97% crystalline fraction is also deposited at a hot wire temperature of 1700°C and a substrate temperature of 290°C. A nanocrystalline film with a 57% crystalline fraction is formed when the substrate temperature is lowered to 150°C. The roles of Cl and H radicals in the formation of crystalline silicon films are discussed.
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M3 - Letter
AN - SCOPUS:0035891953
VL - 40
SP - L1207-L1210
JO - Japanese Journal of Applied Physics, Part 2: Letters
JF - Japanese Journal of Applied Physics, Part 2: Letters
SN - 0021-4922
IS - 11 B
ER -