Low temperature growth of polycrystalline silicon films by hot-wire chemical vapor deposition using SiCl4/H2 gases

Te Chi Wong; Jih Jen Wu

doi:10.1143/jjap.40.l1207

Low temperature growth of polycrystalline silicon films by hot-wire chemical vapor deposition using SiCl₄/H₂ gases

Te Chi Wong, Jih Jen Wu

Department of Chemical Engineering

Research output: Contribution to journal › Letter › peer-review

9 Citations (Scopus)

Abstract

Low-temperature growth of polycrystalline silicon films using SiCl₄/H₂ in a hot-wire chemical vapor deposition (HWCVD) reactor is reported here. Slightly (100) oriented polycrystalline silicon film with a crystalline fraction of 97% has been deposited at a hot wire temperature of 1900°C and a substrate temperature of 320°C. The average grain size of the film is 0.1 μm with a thickness of 0.5 μm. (110) Preferentially orientated silicon film with a 97% crystalline fraction is also deposited at a hot wire temperature of 1700°C and a substrate temperature of 290°C. A nanocrystalline film with a 57% crystalline fraction is formed when the substrate temperature is lowered to 150°C. The roles of Cl and H radicals in the formation of crystalline silicon films are discussed.

Original language	English
Pages (from-to)	L1207-L1210
Journal	Japanese Journal of Applied Physics, Part 2: Letters
Volume	40
Issue number	11 B
DOIs	https://doi.org/10.1143/jjap.40.l1207
Publication status	Published - 2001 Nov 15

All Science Journal Classification (ASJC) codes

Engineering(all)
Physics and Astronomy (miscellaneous)
Physics and Astronomy(all)

Access to Document

10.1143/jjap.40.l1207

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abstract = "Low-temperature growth of polycrystalline silicon films using SiCl4/H2 in a hot-wire chemical vapor deposition (HWCVD) reactor is reported here. Slightly (100) oriented polycrystalline silicon film with a crystalline fraction of 97% has been deposited at a hot wire temperature of 1900°C and a substrate temperature of 320°C. The average grain size of the film is 0.1 μm with a thickness of 0.5 μm. (110) Preferentially orientated silicon film with a 97% crystalline fraction is also deposited at a hot wire temperature of 1700°C and a substrate temperature of 290°C. A nanocrystalline film with a 57% crystalline fraction is formed when the substrate temperature is lowered to 150°C. The roles of Cl and H radicals in the formation of crystalline silicon films are discussed.",

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AU - Wong, Te Chi

AU - Wu, Jih Jen

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N2 - Low-temperature growth of polycrystalline silicon films using SiCl4/H2 in a hot-wire chemical vapor deposition (HWCVD) reactor is reported here. Slightly (100) oriented polycrystalline silicon film with a crystalline fraction of 97% has been deposited at a hot wire temperature of 1900°C and a substrate temperature of 320°C. The average grain size of the film is 0.1 μm with a thickness of 0.5 μm. (110) Preferentially orientated silicon film with a 97% crystalline fraction is also deposited at a hot wire temperature of 1700°C and a substrate temperature of 290°C. A nanocrystalline film with a 57% crystalline fraction is formed when the substrate temperature is lowered to 150°C. The roles of Cl and H radicals in the formation of crystalline silicon films are discussed.

AB - Low-temperature growth of polycrystalline silicon films using SiCl4/H2 in a hot-wire chemical vapor deposition (HWCVD) reactor is reported here. Slightly (100) oriented polycrystalline silicon film with a crystalline fraction of 97% has been deposited at a hot wire temperature of 1900°C and a substrate temperature of 320°C. The average grain size of the film is 0.1 μm with a thickness of 0.5 μm. (110) Preferentially orientated silicon film with a 97% crystalline fraction is also deposited at a hot wire temperature of 1700°C and a substrate temperature of 290°C. A nanocrystalline film with a 57% crystalline fraction is formed when the substrate temperature is lowered to 150°C. The roles of Cl and H radicals in the formation of crystalline silicon films are discussed.

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