Low-Temperature Growth of Well-Aligned β-Ga2O3 Nanowires from a Single-Source Organometallic Precursor

Ko Wei Chang, Jih-Jen Wu

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107 Citations (Scopus)


The low-temperature growth of well-aligned β-Ga2O 3 nanowires from a single-source organometallic precursor is discussed. The selection of the appropriate catalyst for the vapor-liquid-solid (VLS) reaction proceeding at low temperatures, the ability to provide sufficient Ga and O vapors and the selection of the correct substrate are also demonstrated. Structural characterization of the Ga2O3 nanowires by X-ray diffraction (XRD) and transmission electron microscopy (TEM) revealed that the nanowires are oriented in the (2̄01) direction. The selective formation of well-aligned Ga2O3 nanowire arrays is achieved on an Au-patterned sapphire (0001) substrate.

Original languageEnglish
Pages (from-to)545-549
Number of pages5
JournalAdvanced Materials
Issue number6
Publication statusPublished - 2004 Mar 18

All Science Journal Classification (ASJC) codes

  • Materials Science(all)


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