Low-temperature magnetic, thermodynamic, and transport properties of antiferromagnetic CeAuSn single crystals

C. L. Huang, V. Fritsch, B. Pilawa, C. C. Yang, M. Merz, H. V. Löhneysen

Research output: Contribution to journalArticlepeer-review

4 Citations (Scopus)

Abstract

We present measurements of the magnetization M, specific heat C, resistivity ρ, and magnetoresistance MR of single-crystalline hexagonal CeAuSn for temperature down to T=1.6 K and in magnetic field up to B=12 T. Antiferromagnetic ordering at TN=4.4 K is observed as previously found for polycrystalline samples. A strong magnetic easy-plane anisotropy of M for B perpendicular and parallel to the c direction is found with M/M|| ≈ 15 in B=0.1 T around TN, which is attributed to crystal-electric-field anisotropy. The analysis of the magnetic susceptibility indicates ferromagnetic correlations above TN. Measurements of M(T) under hydrostatic pressure P show that TN(P) increases linearly with P at a small rate of 0.035 K/kbar up to 4 kbar and gradually saturates approaching P=16kbar. Zero-field ΔC/T, the phonon contribution to C being subtracted, is proportional to T2 below TN indicating a gapless spin-wave spectrum. It is found that all ΔC(T,B)/T curves for B=0-9 T cross at the same temperature, providing an example of a particularly well defined isosbestic point in a very narrow region around Tiso=6.6 K. Finally, ρ(T) and MR experiments with current perpendicular and parallel to B allow us to separate orbital effects from the Zeeman splitting.

Original languageEnglish
Article number144413
JournalPhysical Review B - Condensed Matter and Materials Physics
Volume91
Issue number14
DOIs
Publication statusPublished - 2015 Apr 16

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

Fingerprint

Dive into the research topics of 'Low-temperature magnetic, thermodynamic, and transport properties of antiferromagnetic CeAuSn single crystals'. Together they form a unique fingerprint.

Cite this