@inproceedings{34fcd44a5f2f4dd6b4731109a7b28aac,
title = "Low temperature post-annealing of ZnO thin-film transistors with high-k gate dielectrics",
abstract = "This work addresses the thin film analysis of ZnO and electrical characteristics of ZnO TFTs with HfO2 high-k: gate dielectrics after low temperature post-annealing. The SIMS analysis shows that the diffusion of Zn atoms into the HTO2 will occur after 300 °C annealing and the related electrical characteristics indicates that the 200 °C annealing will be the optimized annealing condition for the ZnO/HfO2/ITO based TFTs. The ZnO TFTs after optimized annealing condition exhibited transistor behavior over the range 0-7 V; the field effect mobility, subthreshold slope and on/off ratio were measured to be 1.3 cm2V-1s-1, 0.5 V/decade and ∼106, respectively.",
author = "Chen, {Henry J.H.} and Yeh, {Barry B.L.} and Chou, {Wei Yang}",
year = "2009",
doi = "10.1149/1.2980569",
language = "English",
isbn = "9781566776554",
series = "ECS Transactions",
publisher = "Electrochemical Society Inc.",
number = "9",
pages = "315--322",
booktitle = "ECS Transactions - Thin Film Transistors 9, TFT 9",
edition = "9",
note = "Thin Film Transistors 9, TFT 9 - 214th ECS Meeting ; Conference date: 13-10-2008 Through 16-10-2008",
}