Low temperature sintering and microwave dielectric properties of 0.5LaAlO3-0.5SrTiO3 ceramics using copper oxide additions

Cheng Shing Hsu, Cheng-Liang Huang, Jing Fang Tseng, Cheng Chi You

Research output: Contribution to journalArticle

10 Citations (Scopus)

Abstract

The microwave dielectric properties and the microstructures of 0.5LaAlO3-0.5SrTiO3 ceramics with CuO addition prepared with conventional solid-state route have been investigated. Doping with CuO (up to 1 wt.%) can effectively promote the densification and remain comparable dielectric properties of 0.5LaAlO3-0.5SrTiO3 ceramics. It is found that 0.5LaAlO3-0.5SrTiO3 ceramics can be sintered at 1400 °C due to the sintering aid effect resulted from CuO as addition observed by scanning electron microscopy. The dielectric constant as well as the Q × f value decreases with increasing CuO content. At 1460 °C, 0.5LaAlO3-0.5SrTiO3 ceramics with 0.25 wt.% CuO addition possess a dielectric constant (εr) of 35.2, a Q × f value of 24000 (at 8 GHz) and a temperature coefficient of resonant frequency (τf) of -13.5 ppm/°C.

Original languageEnglish
Pages (from-to)2067-2073
Number of pages7
JournalCeramics International
Volume30
Issue number8
DOIs
Publication statusPublished - 2004 Nov 15

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Copper oxides
Dielectric properties
Permittivity
Sintering
Microwaves
Densification
Natural frequencies
Doping (additives)
Temperature
Microstructure
Scanning electron microscopy

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Ceramics and Composites
  • Process Chemistry and Technology
  • Surfaces, Coatings and Films
  • Materials Chemistry

Cite this

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title = "Low temperature sintering and microwave dielectric properties of 0.5LaAlO3-0.5SrTiO3 ceramics using copper oxide additions",
abstract = "The microwave dielectric properties and the microstructures of 0.5LaAlO3-0.5SrTiO3 ceramics with CuO addition prepared with conventional solid-state route have been investigated. Doping with CuO (up to 1 wt.{\%}) can effectively promote the densification and remain comparable dielectric properties of 0.5LaAlO3-0.5SrTiO3 ceramics. It is found that 0.5LaAlO3-0.5SrTiO3 ceramics can be sintered at 1400 °C due to the sintering aid effect resulted from CuO as addition observed by scanning electron microscopy. The dielectric constant as well as the Q × f value decreases with increasing CuO content. At 1460 °C, 0.5LaAlO3-0.5SrTiO3 ceramics with 0.25 wt.{\%} CuO addition possess a dielectric constant (εr) of 35.2, a Q × f value of 24000 (at 8 GHz) and a temperature coefficient of resonant frequency (τf) of -13.5 ppm/°C.",
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Low temperature sintering and microwave dielectric properties of 0.5LaAlO3-0.5SrTiO3 ceramics using copper oxide additions. / Hsu, Cheng Shing; Huang, Cheng-Liang; Tseng, Jing Fang; You, Cheng Chi.

In: Ceramics International, Vol. 30, No. 8, 15.11.2004, p. 2067-2073.

Research output: Contribution to journalArticle

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AB - The microwave dielectric properties and the microstructures of 0.5LaAlO3-0.5SrTiO3 ceramics with CuO addition prepared with conventional solid-state route have been investigated. Doping with CuO (up to 1 wt.%) can effectively promote the densification and remain comparable dielectric properties of 0.5LaAlO3-0.5SrTiO3 ceramics. It is found that 0.5LaAlO3-0.5SrTiO3 ceramics can be sintered at 1400 °C due to the sintering aid effect resulted from CuO as addition observed by scanning electron microscopy. The dielectric constant as well as the Q × f value decreases with increasing CuO content. At 1460 °C, 0.5LaAlO3-0.5SrTiO3 ceramics with 0.25 wt.% CuO addition possess a dielectric constant (εr) of 35.2, a Q × f value of 24000 (at 8 GHz) and a temperature coefficient of resonant frequency (τf) of -13.5 ppm/°C.

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