TY - JOUR
T1 - Low-temperature sintering of microwave dielectrics (Zn,Mg)TiO3
AU - Hsieh, Ming Liang
AU - Chen, Lih Shan
AU - Wang, Shu Ming
AU - Sun, Chian Hao
AU - Weng, Min Hung
AU - Houng, Mau Phon
AU - Fu, Shen Li
PY - 2005/7/8
Y1 - 2005/7/8
N2 - Dielectrics (Zn,Mg)TiO3, having a high dielectric constant and a near zero temperature coefficient of resonant frequency are promising materials for microwave applications. In this work, Bi2O3 was added to (Zn,Mg)TiO3 as a low-temperaturesintering dopant. The addition of Bi2O3 significantly improved the densification of (Zn,Mg) TiO3, which were densified below 1000°C. In addition, the decomposition temperature of (Zn,Mg)TiO3 increased as the magnesium substitution increased. Microwave dielectric properties of (Zn,Mg)TiO 3 ceramics depend on crystalline structure. By properly adjusting the amount of magnesium, a small temperature coefficient of resonant frequency was obtained for (Zn,Mg)TiO3 dielectrics.
AB - Dielectrics (Zn,Mg)TiO3, having a high dielectric constant and a near zero temperature coefficient of resonant frequency are promising materials for microwave applications. In this work, Bi2O3 was added to (Zn,Mg)TiO3 as a low-temperaturesintering dopant. The addition of Bi2O3 significantly improved the densification of (Zn,Mg) TiO3, which were densified below 1000°C. In addition, the decomposition temperature of (Zn,Mg)TiO3 increased as the magnesium substitution increased. Microwave dielectric properties of (Zn,Mg)TiO 3 ceramics depend on crystalline structure. By properly adjusting the amount of magnesium, a small temperature coefficient of resonant frequency was obtained for (Zn,Mg)TiO3 dielectrics.
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U2 - 10.1143/JJAP.44.5045
DO - 10.1143/JJAP.44.5045
M3 - Article
AN - SCOPUS:31544433389
SN - 0021-4922
VL - 44
SP - 5045
EP - 5048
JO - Japanese Journal of Applied Physics
JF - Japanese Journal of Applied Physics
IS - 7 A
ER -