Abstract
We introduce the use of low temperature sputtered NiOx thin film, which substitutes the PEDOT-PSS and solution-processed NiOx as an effective electron blocking layer for mesoscopic NiO/CH3NH3PbI3 perovskite solar cells. The influences of film thickness and oxygen doping on the photovoltaic performances are scrutinized. The cell efficiency has been improved from 9.51 to 10.7% for devices using NiOx fabricated under pure argon atmosphere. With adequate doping under 10% oxygen flow ratio, we achieved power conversion efficiency of 11.6%. The procedure is large area scalable and has the advantage for cost-effective perovskite-based photovoltaics.
Original language | English |
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Pages (from-to) | 11851-11858 |
Number of pages | 8 |
Journal | ACS Applied Materials and Interfaces |
Volume | 6 |
Issue number | 15 |
DOIs | |
Publication status | Published - 2014 Aug 13 |
All Science Journal Classification (ASJC) codes
- Materials Science(all)