Low-temperature sputtered nickel oxide compact thin film as effective electron blocking layer for mesoscopic NiO/CH3NH3PbI 3 perovskite heterojunction solar cells

Kuo Chin Wang; Po Shen Shen; Ming Hsien Li; Shi Chen; Ming Wei Lin; Peter Chen; Tzung Fang Guo

doi:10.1021/am503610u

Low-temperature sputtered nickel oxide compact thin film as effective electron blocking layer for mesoscopic NiO/CH₃NH₃PbI ₃ perovskite heterojunction solar cells

Kuo Chin Wang, Po Shen Shen, Ming Hsien Li, Shi Chen, Ming Wei Lin, Peter Chen, Tzung Fang Guo

Department of Photonics

Research output: Contribution to journal › Article › peer-review

299 Citations (Scopus)

Abstract

We introduce the use of low temperature sputtered NiOx thin film, which substitutes the PEDOT-PSS and solution-processed NiOx as an effective electron blocking layer for mesoscopic NiO/CH₃NH₃PbI₃ perovskite solar cells. The influences of film thickness and oxygen doping on the photovoltaic performances are scrutinized. The cell efficiency has been improved from 9.51 to 10.7% for devices using NiOx fabricated under pure argon atmosphere. With adequate doping under 10% oxygen flow ratio, we achieved power conversion efficiency of 11.6%. The procedure is large area scalable and has the advantage for cost-effective perovskite-based photovoltaics.

Original language	English
Pages (from-to)	11851-11858
Number of pages	8
Journal	ACS Applied Materials and Interfaces
Volume	6
Issue number	15
DOIs	https://doi.org/10.1021/am503610u
Publication status	Published - 2014 Aug 13

All Science Journal Classification (ASJC) codes

Materials Science(all)

UN SDGs

This output contributes to the following UN Sustainable Development Goals (SDGs)

Access to Document

10.1021/am503610u

Cite this

@article{523ef930f60c4b2fa4878d065dbf2808,

title = "Low-temperature sputtered nickel oxide compact thin film as effective electron blocking layer for mesoscopic NiO/CH3NH3PbI 3 perovskite heterojunction solar cells",

abstract = "We introduce the use of low temperature sputtered NiOx thin film, which substitutes the PEDOT-PSS and solution-processed NiOx as an effective electron blocking layer for mesoscopic NiO/CH3NH3PbI3 perovskite solar cells. The influences of film thickness and oxygen doping on the photovoltaic performances are scrutinized. The cell efficiency has been improved from 9.51 to 10.7% for devices using NiOx fabricated under pure argon atmosphere. With adequate doping under 10% oxygen flow ratio, we achieved power conversion efficiency of 11.6%. The procedure is large area scalable and has the advantage for cost-effective perovskite-based photovoltaics.",

author = "Wang, {Kuo Chin} and Shen, {Po Shen} and Li, {Ming Hsien} and Shi Chen and Lin, {Ming Wei} and Peter Chen and Guo, {Tzung Fang}",

year = "2014",

month = aug,

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doi = "10.1021/am503610u",

language = "English",

volume = "6",

pages = "11851--11858",

journal = "ACS applied materials & interfaces",

issn = "1944-8244",

publisher = "American Chemical Society",

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Low-temperature sputtered nickel oxide compact thin film as effective electron blocking layer for mesoscopic NiO/CH₃NH₃PbI ₃ perovskite heterojunction solar cells. / Wang, Kuo Chin; Shen, Po Shen; Li, Ming Hsien et al.

In: ACS Applied Materials and Interfaces, Vol. 6, No. 15, 13.08.2014, p. 11851-11858.

Research output: Contribution to journal › Article › peer-review

TY - JOUR

T1 - Low-temperature sputtered nickel oxide compact thin film as effective electron blocking layer for mesoscopic NiO/CH3NH3PbI 3 perovskite heterojunction solar cells

AU - Wang, Kuo Chin

AU - Shen, Po Shen

AU - Li, Ming Hsien

AU - Chen, Shi

AU - Lin, Ming Wei

AU - Chen, Peter

AU - Guo, Tzung Fang

PY - 2014/8/13

Y1 - 2014/8/13

N2 - We introduce the use of low temperature sputtered NiOx thin film, which substitutes the PEDOT-PSS and solution-processed NiOx as an effective electron blocking layer for mesoscopic NiO/CH3NH3PbI3 perovskite solar cells. The influences of film thickness and oxygen doping on the photovoltaic performances are scrutinized. The cell efficiency has been improved from 9.51 to 10.7% for devices using NiOx fabricated under pure argon atmosphere. With adequate doping under 10% oxygen flow ratio, we achieved power conversion efficiency of 11.6%. The procedure is large area scalable and has the advantage for cost-effective perovskite-based photovoltaics.

AB - We introduce the use of low temperature sputtered NiOx thin film, which substitutes the PEDOT-PSS and solution-processed NiOx as an effective electron blocking layer for mesoscopic NiO/CH3NH3PbI3 perovskite solar cells. The influences of film thickness and oxygen doping on the photovoltaic performances are scrutinized. The cell efficiency has been improved from 9.51 to 10.7% for devices using NiOx fabricated under pure argon atmosphere. With adequate doping under 10% oxygen flow ratio, we achieved power conversion efficiency of 11.6%. The procedure is large area scalable and has the advantage for cost-effective perovskite-based photovoltaics.

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