Low temperature syntheses of nano-crystalline silicon film and Si nanorods by hot-wire CVD

Te Chi Wong; Jih Jen Wu

doi:10.1557/proc-715-a8.2

Low temperature syntheses of nano-crystalline silicon film and Si nanorods by hot-wire CVD

Te Chi Wong, Jih Jen Wu

Department of Chemical Engineering

Research output: Contribution to journal › Conference article › peer-review

1 Citation (Scopus)

Abstract

Low-temperature growth of nano-crystalline silicon film and silicon nanorods by hot-wire chemical vapor deposition (HWCVD) using SiCl₄/H₂ gases are reported here. Nano-crystalline silicon films were deposited at a filament temperature of 1800°C, SiCl₄/H₂ flow rate ratio of 8/37 sccm and a substrate temperature of 150°C. The volume fraction of the crystallinity of the film characterized by Raman spectroscopy is 82%. The TEM analysis reveals that the average size of nano-crystalline silicon film is 5nm. Silicon nanorods with an average diameter of 80 nm were obtained as the SiCl₄/H₂ flow rate ratio was reduced to 5/30 sccm at substrate temperatures lower than 200°C. TEM analyses reveal that Si nanocrystals are embedded in an amorphous nanorods with fish-born like structure.

Original language	English
Pages (from-to)	179-184
Number of pages	6
Journal	Materials Research Society Symposium - Proceedings
Volume	715
DOIs	https://doi.org/10.1557/proc-715-a8.2
Publication status	Published - 2002
Event	Amorphous and Heterogeneous Silicon Films 2002 - San Francisco, CA, United States Duration: 2002 Apr 2 → 2002 Apr 5

All Science Journal Classification (ASJC) codes

General Materials Science
Condensed Matter Physics
Mechanics of Materials
Mechanical Engineering

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title = "Low temperature syntheses of nano-crystalline silicon film and Si nanorods by hot-wire CVD",

abstract = "Low-temperature growth of nano-crystalline silicon film and silicon nanorods by hot-wire chemical vapor deposition (HWCVD) using SiCl4/H2 gases are reported here. Nano-crystalline silicon films were deposited at a filament temperature of 1800°C, SiCl4/H2 flow rate ratio of 8/37 sccm and a substrate temperature of 150°C. The volume fraction of the crystallinity of the film characterized by Raman spectroscopy is 82%. The TEM analysis reveals that the average size of nano-crystalline silicon film is 5nm. Silicon nanorods with an average diameter of 80 nm were obtained as the SiCl4/H2 flow rate ratio was reduced to 5/30 sccm at substrate temperatures lower than 200°C. TEM analyses reveal that Si nanocrystals are embedded in an amorphous nanorods with fish-born like structure.",

author = "Wong, {Te Chi} and Wu, {Jih Jen}",

year = "2002",

doi = "10.1557/proc-715-a8.2",

language = "English",

volume = "715",

pages = "179--184",

journal = "Materials Research Society Symposium - Proceedings",

issn = "0272-9172",

publisher = "Materials Research Society",

note = "Amorphous and Heterogeneous Silicon Films 2002 ; Conference date: 02-04-2002 Through 05-04-2002",

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TY - JOUR

T1 - Low temperature syntheses of nano-crystalline silicon film and Si nanorods by hot-wire CVD

AU - Wong, Te Chi

AU - Wu, Jih Jen

PY - 2002

Y1 - 2002

N2 - Low-temperature growth of nano-crystalline silicon film and silicon nanorods by hot-wire chemical vapor deposition (HWCVD) using SiCl4/H2 gases are reported here. Nano-crystalline silicon films were deposited at a filament temperature of 1800°C, SiCl4/H2 flow rate ratio of 8/37 sccm and a substrate temperature of 150°C. The volume fraction of the crystallinity of the film characterized by Raman spectroscopy is 82%. The TEM analysis reveals that the average size of nano-crystalline silicon film is 5nm. Silicon nanorods with an average diameter of 80 nm were obtained as the SiCl4/H2 flow rate ratio was reduced to 5/30 sccm at substrate temperatures lower than 200°C. TEM analyses reveal that Si nanocrystals are embedded in an amorphous nanorods with fish-born like structure.

AB - Low-temperature growth of nano-crystalline silicon film and silicon nanorods by hot-wire chemical vapor deposition (HWCVD) using SiCl4/H2 gases are reported here. Nano-crystalline silicon films were deposited at a filament temperature of 1800°C, SiCl4/H2 flow rate ratio of 8/37 sccm and a substrate temperature of 150°C. The volume fraction of the crystallinity of the film characterized by Raman spectroscopy is 82%. The TEM analysis reveals that the average size of nano-crystalline silicon film is 5nm. Silicon nanorods with an average diameter of 80 nm were obtained as the SiCl4/H2 flow rate ratio was reduced to 5/30 sccm at substrate temperatures lower than 200°C. TEM analyses reveal that Si nanocrystals are embedded in an amorphous nanorods with fish-born like structure.

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DO - 10.1557/proc-715-a8.2

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AN - SCOPUS:0036909454

SN - 0272-9172

VL - 715

SP - 179

EP - 184

JO - Materials Research Society Symposium - Proceedings

JF - Materials Research Society Symposium - Proceedings

T2 - Amorphous and Heterogeneous Silicon Films 2002

Y2 - 2 April 2002 through 5 April 2002

ER -

Low temperature syntheses of nano-crystalline silicon film and Si nanorods by hot-wire CVD

Abstract

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