Low temperature syntheses of nano-crystalline silicon film and Si nanorods by hot-wire CVD

Te Chi Wong, Jih-Jen Wu

Research output: Contribution to journalConference article

2 Citations (Scopus)

Abstract

Low-temperature growth of nano-crystalline silicon film and silicon nanorods by hot-wire chemical vapor deposition (HWCVD) using SiCl4/H2 gases are reported here. Nano-crystalline silicon films were deposited at a filament temperature of 1800°C, SiCl4/H2 flow rate ratio of 8/37 sccm and a substrate temperature of 150°C. The volume fraction of the crystallinity of the film characterized by Raman spectroscopy is 82%. The TEM analysis reveals that the average size of nano-crystalline silicon film is 5nm. Silicon nanorods with an average diameter of 80 nm were obtained as the SiCl4/H2 flow rate ratio was reduced to 5/30 sccm at substrate temperatures lower than 200°C. TEM analyses reveal that Si nanocrystals are embedded in an amorphous nanorods with fish-born like structure.

Original languageEnglish
Pages (from-to)179-184
Number of pages6
JournalMaterials Research Society Symposium - Proceedings
Volume715
Publication statusPublished - 2002 Dec 1
EventAmorphous and Heterogeneous Silicon Films 2002 - San Francisco, CA, United States
Duration: 2002 Apr 22002 Apr 5

Fingerprint

Nanocrystalline silicon
silicon films
Nanorods
nanorods
Chemical vapor deposition
vapor deposition
wire
Wire
Silicon
synthesis
flow velocity
transmission electron microscopy
Flow rate
fishes
silicon
Transmission electron microscopy
Temperature
crystallinity
filaments
nanocrystals

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

Cite this

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abstract = "Low-temperature growth of nano-crystalline silicon film and silicon nanorods by hot-wire chemical vapor deposition (HWCVD) using SiCl4/H2 gases are reported here. Nano-crystalline silicon films were deposited at a filament temperature of 1800°C, SiCl4/H2 flow rate ratio of 8/37 sccm and a substrate temperature of 150°C. The volume fraction of the crystallinity of the film characterized by Raman spectroscopy is 82{\%}. The TEM analysis reveals that the average size of nano-crystalline silicon film is 5nm. Silicon nanorods with an average diameter of 80 nm were obtained as the SiCl4/H2 flow rate ratio was reduced to 5/30 sccm at substrate temperatures lower than 200°C. TEM analyses reveal that Si nanocrystals are embedded in an amorphous nanorods with fish-born like structure.",
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Low temperature syntheses of nano-crystalline silicon film and Si nanorods by hot-wire CVD. / Wong, Te Chi; Wu, Jih-Jen.

In: Materials Research Society Symposium - Proceedings, Vol. 715, 01.12.2002, p. 179-184.

Research output: Contribution to journalConference article

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N2 - Low-temperature growth of nano-crystalline silicon film and silicon nanorods by hot-wire chemical vapor deposition (HWCVD) using SiCl4/H2 gases are reported here. Nano-crystalline silicon films were deposited at a filament temperature of 1800°C, SiCl4/H2 flow rate ratio of 8/37 sccm and a substrate temperature of 150°C. The volume fraction of the crystallinity of the film characterized by Raman spectroscopy is 82%. The TEM analysis reveals that the average size of nano-crystalline silicon film is 5nm. Silicon nanorods with an average diameter of 80 nm were obtained as the SiCl4/H2 flow rate ratio was reduced to 5/30 sccm at substrate temperatures lower than 200°C. TEM analyses reveal that Si nanocrystals are embedded in an amorphous nanorods with fish-born like structure.

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