Low-threshold-current-density, long-wavelength, highly strained ingaas laser grown by metalorganic chemical vapor deposition

I. Liang Chen, Wei Chou Hsu, Hao Chung Kuo, Hsin Chieh Yu, Chia Pin Sung, Chen Ming Lu, Chih Hung Chiou, Jin Mei Wang, Yu Hsiang Chang, Tsin Dong Lee, Jyh Shyang Wang

Research output: Contribution to journalArticle

5 Citations (Scopus)

Abstract

A long-emission-wavelength laser with multiple InGaAs/GaAs quantum wells without a strain-compensated barrier was grown by metalorganic chemical vapor deposition (MOCVD). InGaAs quantum well (QW) broad-area laser diodes with an emission wavelength of up to 1214nm were realized. A measured room-temperature threshold current density of only 173 A/cm2 for a 2-mm-cavity device and a transparency current density of 66 A/cm2 were obtained. The internal quantum efficiency and laser cavity loss were 67% and 6cm-1, respectively.

Original languageEnglish
Pages (from-to)7485-7487
Number of pages3
JournalJapanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
Volume44
Issue number10
DOIs
Publication statusPublished - 2005 Oct 11

All Science Journal Classification (ASJC) codes

  • Engineering(all)
  • Physics and Astronomy(all)

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