Low-threshold-current-density, long-wavelength, highly strained ingaas laser grown by metalorganic chemical vapor deposition

I. Liang Chen; Wei Chou Hsu; Hao Chung Kuo; Hsin Chieh Yu; Chia Pin Sung; Chen Ming Lu; Chih Hung Chiou; Jin Mei Wang; Yu Hsiang Chang; Tsin Dong Lee; Jyh Shyang Wang

doi:10.1143/JJAP.44.7485

Low-threshold-current-density, long-wavelength, highly strained ingaas laser grown by metalorganic chemical vapor deposition

I. Liang Chen, Wei Chou Hsu, Hao Chung Kuo, Hsin Chieh Yu, Chia Pin Sung, Chen Ming Lu, Chih Hung Chiou, Jin Mei Wang, Yu Hsiang Chang, Tsin Dong Lee, Jyh Shyang Wang

Research output: Contribution to journal › Article › peer-review

6 Citations (Scopus)

Abstract

A long-emission-wavelength laser with multiple InGaAs/GaAs quantum wells without a strain-compensated barrier was grown by metalorganic chemical vapor deposition (MOCVD). InGaAs quantum well (QW) broad-area laser diodes with an emission wavelength of up to 1214nm were realized. A measured room-temperature threshold current density of only 173 A/cm² for a 2-mm-cavity device and a transparency current density of 66 A/cm² were obtained. The internal quantum efficiency and laser cavity loss were 67% and 6cm^-1, respectively.

Original language	English
Pages (from-to)	7485-7487
Number of pages	3
Journal	Japanese Journal of Applied Physics
Volume	44
Issue number	10
DOIs	https://doi.org/10.1143/JJAP.44.7485
Publication status	Published - 2005 Oct 11

All Science Journal Classification (ASJC) codes

General Engineering
General Physics and Astronomy

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title = "Low-threshold-current-density, long-wavelength, highly strained ingaas laser grown by metalorganic chemical vapor deposition",

abstract = "A long-emission-wavelength laser with multiple InGaAs/GaAs quantum wells without a strain-compensated barrier was grown by metalorganic chemical vapor deposition (MOCVD). InGaAs quantum well (QW) broad-area laser diodes with an emission wavelength of up to 1214nm were realized. A measured room-temperature threshold current density of only 173 A/cm2 for a 2-mm-cavity device and a transparency current density of 66 A/cm2 were obtained. The internal quantum efficiency and laser cavity loss were 67% and 6cm-1, respectively.",

author = "Chen, {I. Liang} and Hsu, {Wei Chou} and Kuo, {Hao Chung} and Yu, {Hsin Chieh} and Sung, {Chia Pin} and Lu, {Chen Ming} and Chiou, {Chih Hung} and Wang, {Jin Mei} and Chang, {Yu Hsiang} and Lee, {Tsin Dong} and Wang, {Jyh Shyang}",

year = "2005",

month = oct,

day = "11",

doi = "10.1143/JJAP.44.7485",

language = "English",

volume = "44",

pages = "7485--7487",

journal = "Japanese Journal of Applied Physics",

issn = "0021-4922",

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TY - JOUR

T1 - Low-threshold-current-density, long-wavelength, highly strained ingaas laser grown by metalorganic chemical vapor deposition

AU - Chen, I. Liang

AU - Hsu, Wei Chou

AU - Kuo, Hao Chung

AU - Yu, Hsin Chieh

AU - Sung, Chia Pin

AU - Lu, Chen Ming

AU - Chiou, Chih Hung

AU - Wang, Jin Mei

AU - Chang, Yu Hsiang

AU - Lee, Tsin Dong

AU - Wang, Jyh Shyang

PY - 2005/10/11

Y1 - 2005/10/11

N2 - A long-emission-wavelength laser with multiple InGaAs/GaAs quantum wells without a strain-compensated barrier was grown by metalorganic chemical vapor deposition (MOCVD). InGaAs quantum well (QW) broad-area laser diodes with an emission wavelength of up to 1214nm were realized. A measured room-temperature threshold current density of only 173 A/cm2 for a 2-mm-cavity device and a transparency current density of 66 A/cm2 were obtained. The internal quantum efficiency and laser cavity loss were 67% and 6cm-1, respectively.

AB - A long-emission-wavelength laser with multiple InGaAs/GaAs quantum wells without a strain-compensated barrier was grown by metalorganic chemical vapor deposition (MOCVD). InGaAs quantum well (QW) broad-area laser diodes with an emission wavelength of up to 1214nm were realized. A measured room-temperature threshold current density of only 173 A/cm2 for a 2-mm-cavity device and a transparency current density of 66 A/cm2 were obtained. The internal quantum efficiency and laser cavity loss were 67% and 6cm-1, respectively.

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U2 - 10.1143/JJAP.44.7485

DO - 10.1143/JJAP.44.7485

M3 - Article

AN - SCOPUS:31444457172

SN - 0021-4922

VL - 44

SP - 7485

EP - 7487

JO - Japanese Journal of Applied Physics

JF - Japanese Journal of Applied Physics

IS - 10

ER -

Low-threshold-current-density, long-wavelength, highly strained ingaas laser grown by metalorganic chemical vapor deposition

Abstract

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