Low threshold current, low resistance 1.3 μm InAs-InGaAs quantum-dot VCSELs with fully doped DBRs grown by MBE

Hsin Chieh Yu, Jyh Shyang Wang, Yan Kuin Su, Shoou-Jinn Chang, Hao Chung Kuo, Fang I. Lai, Y. H. Chang, Hong Pin D. Yang

Research output: Chapter in Book/Report/Conference proceedingConference contribution

2 Citations (Scopus)

Abstract

The processing technology of 1.3μm InAs-InGaAs quantum-dot VCSELs with fully doped DBRs grown by MBE will be demonstrated. The threshold currents of the fabricated devices with 10 μm oxide-confined aperture are 0.7mA, which correspond to 890A/cm2 threshold current density. And the threshold voltage of the device is 1.03V and maximum output power is 33 μW. The series resistance is 85 Ω which is 10 times lower then our preliminary work and 3 times lower then intracavity contacted InAs-InGaAs quantum-dot VCSEL. This relatively lower resistance can even comparable with the best result reported in InGaAs oxide-confined VCSELs with intracavity contact.

Original languageEnglish
Title of host publicationVertical-Cavity Surface-Emitting Lasers XI
DOIs
Publication statusPublished - 2007 May 24
EventVertical-Cavity Surface-Emitting Lasers XI - San Jose, CA, United States
Duration: 2007 Jan 242007 Jan 25

Publication series

NameProceedings of SPIE - The International Society for Optical Engineering
Volume6484
ISSN (Print)0277-786X

Other

OtherVertical-Cavity Surface-Emitting Lasers XI
CountryUnited States
CitySan Jose, CA
Period07-01-2407-01-25

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Computer Science Applications
  • Applied Mathematics
  • Electrical and Electronic Engineering

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  • Cite this

    Yu, H. C., Wang, J. S., Su, Y. K., Chang, S-J., Kuo, H. C., Lai, F. I., Chang, Y. H., & Yang, H. P. D. (2007). Low threshold current, low resistance 1.3 μm InAs-InGaAs quantum-dot VCSELs with fully doped DBRs grown by MBE. In Vertical-Cavity Surface-Emitting Lasers XI [64840E] (Proceedings of SPIE - The International Society for Optical Engineering; Vol. 6484). https://doi.org/10.1117/12.697732