Low threshold current, low resistance 1.3 μm InAs-InGaAs quantum-dot VCSELs with fully doped DBRs grown by MBE

Hsin Chieh Yu, Jyh Shyang Wang, Yan Kuin Su, Shoou Jinn Chang, Hao Chung Kuo, Fang I. Lai, Y. H. Chang, Hong Pin D. Yang

Research output: Chapter in Book/Report/Conference proceedingConference contribution

2 Citations (Scopus)

Abstract

The processing technology of 1.3μm InAs-InGaAs quantum-dot VCSELs with fully doped DBRs grown by MBE will be demonstrated. The threshold currents of the fabricated devices with 10 μm oxide-confined aperture are 0.7mA, which correspond to 890A/cm2 threshold current density. And the threshold voltage of the device is 1.03V and maximum output power is 33 μW. The series resistance is 85 Ω which is 10 times lower then our preliminary work and 3 times lower then intracavity contacted InAs-InGaAs quantum-dot VCSEL. This relatively lower resistance can even comparable with the best result reported in InGaAs oxide-confined VCSELs with intracavity contact.

Original languageEnglish
Title of host publicationVertical-Cavity Surface-Emitting Lasers XI
DOIs
Publication statusPublished - 2007
EventVertical-Cavity Surface-Emitting Lasers XI - San Jose, CA, United States
Duration: 2007 Jan 242007 Jan 25

Publication series

NameProceedings of SPIE - The International Society for Optical Engineering
Volume6484
ISSN (Print)0277-786X

Other

OtherVertical-Cavity Surface-Emitting Lasers XI
Country/TerritoryUnited States
CitySan Jose, CA
Period07-01-2407-01-25

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Computer Science Applications
  • Applied Mathematics
  • Electrical and Electronic Engineering

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