Low threshold voltage and high drive current poly-silicon thin film transistors using ytterbium metal gate and LaALO3 dielectric

B. F. Hung; C. H. Wu; Albert Chin; S. J. Wang; J. W. Lin; I. J. Hsieh

Low threshold voltage and high drive current poly-silicon thin film transistors using ytterbium metal gate and LaALO₃ dielectric

B. F. Hung, C. H. Wu, Albert Chin, S. J. Wang, J. W. Lin, I. J. Hsieh

Institute of Microelectronics

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

We have demonstrated high-performance metal-gate/high-κ Ytterbium/LaAlO₃ low-temperature poly-Si (LTPS) thin film transistors (TFTs) that have both high drive current capability and high voltage operation. The high drive current is due to the combined effect of low work-function Ytterbium metal gate and high gate capacitance by high-κ LaAlO₃ dielectric. The high breakdown voltage is also due to the high-κ LaAlO₃ dielectric to give larger physical thickness at the same equivalent oxide thickness (EOT). The good reliability and full process compatibility are the other important merits for Ytterbium/LaAlO₃ device.

Original language	English
Title of host publication	AD'07 - Proceedings of Asia Display 2007
Pages	1190-1193
Number of pages	4
Publication status	Published - 2007 Dec 1
Event	Asia Display 2007, AD'07 - Shanghai, China Duration: 2007 Mar 12 → 2007 Mar 16

Publication series

Name	AD'07 - Proceedings of Asia Display 2007
Volume	2

Other

Other	Asia Display 2007, AD'07
Country/Territory	China
City	Shanghai
Period	07-03-12 → 07-03-16

All Science Journal Classification (ASJC) codes

Hardware and Architecture
Electrical and Electronic Engineering

Cite this

@inproceedings{de417cf6301146f99179988df79ec988,

title = "Low threshold voltage and high drive current poly-silicon thin film transistors using ytterbium metal gate and LaALO3 dielectric",

abstract = "We have demonstrated high-performance metal-gate/high-κ Ytterbium/LaAlO3 low-temperature poly-Si (LTPS) thin film transistors (TFTs) that have both high drive current capability and high voltage operation. The high drive current is due to the combined effect of low work-function Ytterbium metal gate and high gate capacitance by high-κ LaAlO3 dielectric. The high breakdown voltage is also due to the high-κ LaAlO3 dielectric to give larger physical thickness at the same equivalent oxide thickness (EOT). The good reliability and full process compatibility are the other important merits for Ytterbium/LaAlO3 device.",

author = "Hung, {B. F.} and Wu, {C. H.} and Albert Chin and Wang, {S. J.} and Lin, {J. W.} and Hsieh, {I. J.}",

year = "2007",

month = dec,

day = "1",

language = "English",

isbn = "9787561752289",

series = "AD'07 - Proceedings of Asia Display 2007",

pages = "1190--1193",

booktitle = "AD'07 - Proceedings of Asia Display 2007",

note = "Asia Display 2007, AD'07 ; Conference date: 12-03-2007 Through 16-03-2007",

}

Low threshold voltage and high drive current poly-silicon thin film transistors using ytterbium metal gate and LaALO₃ dielectric. / Hung, B. F.; Wu, C. H.; Chin, Albert et al.
AD'07 - Proceedings of Asia Display 2007. 2007. p. 1190-1193 (AD'07 - Proceedings of Asia Display 2007; Vol. 2).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

TY - GEN

T1 - Low threshold voltage and high drive current poly-silicon thin film transistors using ytterbium metal gate and LaALO3 dielectric

AU - Hung, B. F.

AU - Wu, C. H.

AU - Chin, Albert

AU - Wang, S. J.

AU - Lin, J. W.

AU - Hsieh, I. J.

PY - 2007/12/1

Y1 - 2007/12/1

N2 - We have demonstrated high-performance metal-gate/high-κ Ytterbium/LaAlO3 low-temperature poly-Si (LTPS) thin film transistors (TFTs) that have both high drive current capability and high voltage operation. The high drive current is due to the combined effect of low work-function Ytterbium metal gate and high gate capacitance by high-κ LaAlO3 dielectric. The high breakdown voltage is also due to the high-κ LaAlO3 dielectric to give larger physical thickness at the same equivalent oxide thickness (EOT). The good reliability and full process compatibility are the other important merits for Ytterbium/LaAlO3 device.

AB - We have demonstrated high-performance metal-gate/high-κ Ytterbium/LaAlO3 low-temperature poly-Si (LTPS) thin film transistors (TFTs) that have both high drive current capability and high voltage operation. The high drive current is due to the combined effect of low work-function Ytterbium metal gate and high gate capacitance by high-κ LaAlO3 dielectric. The high breakdown voltage is also due to the high-κ LaAlO3 dielectric to give larger physical thickness at the same equivalent oxide thickness (EOT). The good reliability and full process compatibility are the other important merits for Ytterbium/LaAlO3 device.

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T3 - AD'07 - Proceedings of Asia Display 2007

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T2 - Asia Display 2007, AD'07

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