Low threshold voltage and high drive current poly-silicon thin film transistors using ytterbium metal gate and LaALO3 dielectric

B. F. Hung, C. H. Wu, Albert Chin, S. J. Wang, J. W. Lin, I. J. Hsieh

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

We have demonstrated high-performance metal-gate/high-κ Ytterbium/LaAlO3 low-temperature poly-Si (LTPS) thin film transistors (TFTs) that have both high drive current capability and high voltage operation. The high drive current is due to the combined effect of low work-function Ytterbium metal gate and high gate capacitance by high-κ LaAlO3 dielectric. The high breakdown voltage is also due to the high-κ LaAlO3 dielectric to give larger physical thickness at the same equivalent oxide thickness (EOT). The good reliability and full process compatibility are the other important merits for Ytterbium/LaAlO3 device.

Original languageEnglish
Title of host publicationAD'07 - Proceedings of Asia Display 2007
Pages1190-1193
Number of pages4
Publication statusPublished - 2007 Dec 1
EventAsia Display 2007, AD'07 - Shanghai, China
Duration: 2007 Mar 122007 Mar 16

Publication series

NameAD'07 - Proceedings of Asia Display 2007
Volume2

Other

OtherAsia Display 2007, AD'07
CountryChina
CityShanghai
Period07-03-1207-03-16

All Science Journal Classification (ASJC) codes

  • Hardware and Architecture
  • Electrical and Electronic Engineering

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    Hung, B. F., Wu, C. H., Chin, A., Wang, S. J., Lin, J. W., & Hsieh, I. J. (2007). Low threshold voltage and high drive current poly-silicon thin film transistors using ytterbium metal gate and LaALO3 dielectric. In AD'07 - Proceedings of Asia Display 2007 (pp. 1190-1193). (AD'07 - Proceedings of Asia Display 2007; Vol. 2).