Abstract
A flexible thin-film transistor (TFT) was made by integrating a high-κ HfLaO gate dielectric and an amorphous-InGaZnO (a-IGZO) active layer on a polyimide substrate. This flexible HfLaO/a-IGZO TFT exhibits a low threshold voltage of 0.1 V, a small subthreshold swing of 0.18 V/dec, a high maximum saturation mobility of 22.1 cm2V • s, and an acceptable on/off current ratio of 2×105. The low threshold voltage and small subthreshold swing allow the device to operate at 1.5 V for low-power applications, which should enable significant future progress in energy efficiency.
Original language | English |
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Article number | 5460931 |
Pages (from-to) | 680-682 |
Number of pages | 3 |
Journal | IEEE Electron Device Letters |
Volume | 31 |
Issue number | 7 |
DOIs | |
Publication status | Published - 2010 Jul |
All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Electrical and Electronic Engineering