Low-voltage-driven flexible InGaZnO thin-film transistor with small subthreshold swing

Nai Chao Su, Shui Jinn Wang, Chin Chuan Huang, Yu Han Chen, Hao Yuan Huang, Chen Kuo Chiang, Albert Chin

Research output: Contribution to journalArticlepeer-review

57 Citations (Scopus)


A flexible thin-film transistor (TFT) was made by integrating a high-κ HfLaO gate dielectric and an amorphous-InGaZnO (a-IGZO) active layer on a polyimide substrate. This flexible HfLaO/a-IGZO TFT exhibits a low threshold voltage of 0.1 V, a small subthreshold swing of 0.18 V/dec, a high maximum saturation mobility of 22.1 cm2V • s, and an acceptable on/off current ratio of 2×105. The low threshold voltage and small subthreshold swing allow the device to operate at 1.5 V for low-power applications, which should enable significant future progress in energy efficiency.

Original languageEnglish
Article number5460931
Pages (from-to)680-682
Number of pages3
JournalIEEE Electron Device Letters
Issue number7
Publication statusPublished - 2010 Jul

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering


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