Low write-energy magnetic tunnel junctions for high-speed spin-transfer-torque MRAM

P. Khalili Amiri; Z. M. Zeng; P. Upadhyaya; G. Rowlands; H. Zhao; I. N. Krivorotov; J. P. Wang; H. W. Jiang; J. A. Katine; J. Langer; K. Galatsis; K. L. Wang

doi:10.1109/LED.2010.2082487

Low write-energy magnetic tunnel junctions for high-speed spin-transfer-torque MRAM

P. Khalili Amiri, Z. M. Zeng, P. Upadhyaya, G. Rowlands, H. Zhao, I. N. Krivorotov, J. P. Wang, H. W. Jiang, J. A. Katine, J. Langer, K. Galatsis, K. L. Wang

College of Electrical Engineering and Computer Science

Research output: Contribution to journal › Article › peer-review

43 Citations (Scopus)

Abstract

This letter presents energy-efficient MgO based magnetic tunnel junction (MTJ) bits for high-speed spin transfer torque magnetoresistive random access memory (STT-MRAM). We present experimental data illustrating the effect of device shape, area, and tunnel-barrier thickness of the MTJ on its switching voltage, thermal stability, and energy per write operation in the nanosecond switching regime. Finite-temperature micromagnetic simulations show that the write energy changes with operating temperature. The temperature sensitivity increases with increasing write pulsewidth and decreasing write voltage. We demonstrate STT-MRAM cells with switching energies of < 1 pJ for write times of 15 ns.

Original language	English
Article number	5623296
Pages (from-to)	57-59
Number of pages	3
Journal	IEEE Electron Device Letters
Volume	32
Issue number	1
DOIs	https://doi.org/10.1109/LED.2010.2082487
Publication status	Published - 2011 Jan

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering

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10.1109/LED.2010.2082487

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title = "Low write-energy magnetic tunnel junctions for high-speed spin-transfer-torque MRAM",

abstract = "This letter presents energy-efficient MgO based magnetic tunnel junction (MTJ) bits for high-speed spin transfer torque magnetoresistive random access memory (STT-MRAM). We present experimental data illustrating the effect of device shape, area, and tunnel-barrier thickness of the MTJ on its switching voltage, thermal stability, and energy per write operation in the nanosecond switching regime. Finite-temperature micromagnetic simulations show that the write energy changes with operating temperature. The temperature sensitivity increases with increasing write pulsewidth and decreasing write voltage. We demonstrate STT-MRAM cells with switching energies of < 1 pJ for write times of 15 ns.",

author = "{Khalili Amiri}, P. and Zeng, {Z. M.} and P. Upadhyaya and G. Rowlands and H. Zhao and Krivorotov, {I. N.} and Wang, {J. P.} and Jiang, {H. W.} and Katine, {J. A.} and J. Langer and K. Galatsis and Wang, {K. L.}",

note = "Funding Information: Manuscript received September 5, 2010; revised September 23, 2010; accepted September 24, 2010. Date of publication November 9, 2010; date of current version December 27, 2010. This work was supported in part by the Defense Advanced Research Projects Agency STT-RAM Program and in part by the Nanoelectronics Research Initiative through the Western Institute of Nanoelectronics. The review of this letter was arranged by Editor L. Selmi.",

year = "2011",

month = jan,

doi = "10.1109/LED.2010.2082487",

language = "English",

volume = "32",

pages = "57--59",

journal = "IEEE Electron Device Letters",

issn = "0741-3106",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

number = "1",

}

TY - JOUR

T1 - Low write-energy magnetic tunnel junctions for high-speed spin-transfer-torque MRAM

AU - Khalili Amiri, P.

AU - Zeng, Z. M.

AU - Upadhyaya, P.

AU - Rowlands, G.

AU - Zhao, H.

AU - Krivorotov, I. N.

AU - Wang, J. P.

AU - Jiang, H. W.

AU - Katine, J. A.

AU - Langer, J.

AU - Galatsis, K.

AU - Wang, K. L.

N1 - Funding Information: Manuscript received September 5, 2010; revised September 23, 2010; accepted September 24, 2010. Date of publication November 9, 2010; date of current version December 27, 2010. This work was supported in part by the Defense Advanced Research Projects Agency STT-RAM Program and in part by the Nanoelectronics Research Initiative through the Western Institute of Nanoelectronics. The review of this letter was arranged by Editor L. Selmi.

PY - 2011/1

Y1 - 2011/1

N2 - This letter presents energy-efficient MgO based magnetic tunnel junction (MTJ) bits for high-speed spin transfer torque magnetoresistive random access memory (STT-MRAM). We present experimental data illustrating the effect of device shape, area, and tunnel-barrier thickness of the MTJ on its switching voltage, thermal stability, and energy per write operation in the nanosecond switching regime. Finite-temperature micromagnetic simulations show that the write energy changes with operating temperature. The temperature sensitivity increases with increasing write pulsewidth and decreasing write voltage. We demonstrate STT-MRAM cells with switching energies of < 1 pJ for write times of 15 ns.

AB - This letter presents energy-efficient MgO based magnetic tunnel junction (MTJ) bits for high-speed spin transfer torque magnetoresistive random access memory (STT-MRAM). We present experimental data illustrating the effect of device shape, area, and tunnel-barrier thickness of the MTJ on its switching voltage, thermal stability, and energy per write operation in the nanosecond switching regime. Finite-temperature micromagnetic simulations show that the write energy changes with operating temperature. The temperature sensitivity increases with increasing write pulsewidth and decreasing write voltage. We demonstrate STT-MRAM cells with switching energies of < 1 pJ for write times of 15 ns.

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JO - IEEE Electron Device Letters

JF - IEEE Electron Device Letters

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ER -

Low write-energy magnetic tunnel junctions for high-speed spin-transfer-torque MRAM

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