Abstract
With additional precursor soaking, a thin Al2O3 dielectric layer can be grown on mono-layer MoS2 by using atomic layer deposition (ALD). Similar optical characteristics are observed before and after ALD growth for the mono-layer MoS2, which indicates that minor damage to the thin 2D material film is introduced during the growth procedure. With the thin separation layer, luminescence enhancement and dual-color emission are observed by transferring MoS2 and WS2 mono-layer 2D materials to 5 nm Al2O3/mono-layer MoS2 samples, respectively. The results demonstrate that with careful treatment of the interfaces of 2D crystals with other materials, different stacked structures can be established.
| Original language | English |
|---|---|
| Article number | 365702 |
| Journal | Nanotechnology |
| Volume | 31 |
| Issue number | 36 |
| DOIs | |
| Publication status | Published - 2020 Sept 4 |
All Science Journal Classification (ASJC) codes
- Bioengineering
- General Chemistry
- General Materials Science
- Mechanics of Materials
- Mechanical Engineering
- Electrical and Electronic Engineering
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