Luminescence enhancement mechanism of ZnGa₂O₄ phosphor screen with an In₂O₃ buffer layer

The luminescence enhancement mechanism of a white Zn Ga2 O4 phosphor screen with an In2 O3 buffer layer was studied by growing Zn Ga2 O4 with optimal sputtering parameters and varying the deposition conditions of In2 O3. A Zn Ga2 O4 film with better crystallization and smaller grains was obtained when it was deposited on In2 O3. These qualities revealed that the resistivity of the phosphor screen was correlated with the surface roughness and resistivity of the In2 O3 buffer layer. The photoluminescence spectra of the phosphor screen revealed that the ligand field of the Ga luminescence center was not modified when the In2 O3 deposition parameters were varied; however, the emission intensities were altered due to the electron-transition probability in the Ga energy levels changing with the crystallization of phosphor. A significantly enhanced emission from the phosphor screen was observed by improving the crystallization, surface morphology, and resistivity of the prepared Zn Ga2 O4 phosphor film with the In2 O3 buffer layer.