M -plane (10 1- 0) InN heteroepitaxied on (100) -γ -LiAlO2 substrate: Growth orientation control and characterization of structural and optical anisotropy

Ching Lien Hsiao, Jr Tai Chen, Hsu Cheng Hsu, Ying Chieh Liao, Po Han Tseng, Yen Ting Chen, Zhe Chuan Feng, Li Wei Tu, Mitch M.C. Chou, Li Chyong Chen, Kuei Hsien Chen

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Abstract

Heteroepitaxial growth of m -plane (10 1- 0) InN film on (100) -γ -LiAlO2 (LAO) substrate has been realized by plasma-assisted molecular-beam epitaxy. Surface treatment of LAO substrate plays an important role in controlling the resultant phase and purity of m -plane InN. X-ray diffraction, reflection high-energy electron diffraction, electron back scatter diffraction, and transmission electron microscopy (TEM) studies revealed formation of pure m -plane InN film using substrate preannealed at 800 °C but without any nitridation. In contrast, using substrate with nitridation but otherwise identical pretreatment and growth conditions, c -plane (0001) InN columnar structure was grown, instead of m -plane InN film. Structural anisotropy of the m -plane InN epitaxied on LAO is attributed to the I 1 type base-plane stacking faults according to the modified Williamson-Hall and TEM analyses. A rectangular-to-rectangular atomic stacking sequence and a commensurately lattice-matched condition in epitaxial direction of [1 2- 10] InN [001] LAO with a small misfit strain of ∼0.2% are proposed to realize this heteroepitaxy. Angle-dependent polarized UV-Raman spectra showed that all the InN phonon modes follow Raman selection rule well. Strong polarization anisotropy of photoluminescence (PL) emission located at ∼0.63 eV was observed, as evidenced by a high polarization degree of 87% of the m -plane InN determined by infrared polarized PL spectroscopy.

Original languageEnglish
Article number073502
JournalJournal of Applied Physics
Volume107
Issue number7
DOIs
Publication statusPublished - 2010 Apr 1

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy(all)

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