M -plane (10 1- 0) InN heteroepitaxied on (100) -γ -LiAlO2 substrate: Growth orientation control and characterization of structural and optical anisotropy

Ching Lien Hsiao; Jr Tai Chen; Hsu Cheng Hsu; Ying Chieh Liao; Po Han Tseng; Yen Ting Chen; Zhe Chuan Feng; Li Wei Tu; Mitch M.C. Chou; Li Chyong Chen; Kuei Hsien Chen

doi:10.1063/1.3359680

M -plane (10 1- 0) InN heteroepitaxied on (100) -γ -LiAlO₂ substrate: Growth orientation control and characterization of structural and optical anisotropy

Ching Lien Hsiao, Jr Tai Chen, Hsu Cheng Hsu, Ying Chieh Liao, Po Han Tseng, Yen Ting Chen, Zhe Chuan Feng, Li Wei Tu, Mitch M.C. Chou, Li Chyong Chen, Kuei Hsien Chen

Department of Photonics

Research output: Contribution to journal › Article › peer-review

13 Citations (Scopus)

Abstract

Heteroepitaxial growth of m -plane (10 1- 0) InN film on (100) -γ -LiAlO₂ (LAO) substrate has been realized by plasma-assisted molecular-beam epitaxy. Surface treatment of LAO substrate plays an important role in controlling the resultant phase and purity of m -plane InN. X-ray diffraction, reflection high-energy electron diffraction, electron back scatter diffraction, and transmission electron microscopy (TEM) studies revealed formation of pure m -plane InN film using substrate preannealed at 800 °C but without any nitridation. In contrast, using substrate with nitridation but otherwise identical pretreatment and growth conditions, c -plane (0001) InN columnar structure was grown, instead of m -plane InN film. Structural anisotropy of the m -plane InN epitaxied on LAO is attributed to the I ₁ type base-plane stacking faults according to the modified Williamson-Hall and TEM analyses. A rectangular-to-rectangular atomic stacking sequence and a commensurately lattice-matched condition in epitaxial direction of [1 2- 10] InN [001] LAO with a small misfit strain of ∼0.2% are proposed to realize this heteroepitaxy. Angle-dependent polarized UV-Raman spectra showed that all the InN phonon modes follow Raman selection rule well. Strong polarization anisotropy of photoluminescence (PL) emission located at ∼0.63 eV was observed, as evidenced by a high polarization degree of 87% of the m -plane InN determined by infrared polarized PL spectroscopy.

Original language	English
Article number	073502
Journal	Journal of Applied Physics
Volume	107
Issue number	7
DOIs	https://doi.org/10.1063/1.3359680
Publication status	Published - 2010 Apr 1

All Science Journal Classification (ASJC) codes

General Physics and Astronomy

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10.1063/1.3359680

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Hsiao, C. L., Chen, J. T., Hsu, H. C., Liao, Y. C., Tseng, P. H., Chen, Y. T., Feng, Z. C., Tu, L. W., Chou, M. M. C., Chen, L. C., & Chen, K. H. (2010). M -plane (10 1- 0) InN heteroepitaxied on (100) -γ -LiAlO₂ substrate: Growth orientation control and characterization of structural and optical anisotropy. Journal of Applied Physics, 107(7), Article 073502. https://doi.org/10.1063/1.3359680

@article{00703d7112c441fda3dd384ce06cbbc8,

title = "M -plane (10 1- 0) InN heteroepitaxied on (100) -γ -LiAlO2 substrate: Growth orientation control and characterization of structural and optical anisotropy",

abstract = "Heteroepitaxial growth of m -plane (10 1- 0) InN film on (100) -γ -LiAlO2 (LAO) substrate has been realized by plasma-assisted molecular-beam epitaxy. Surface treatment of LAO substrate plays an important role in controlling the resultant phase and purity of m -plane InN. X-ray diffraction, reflection high-energy electron diffraction, electron back scatter diffraction, and transmission electron microscopy (TEM) studies revealed formation of pure m -plane InN film using substrate preannealed at 800 °C but without any nitridation. In contrast, using substrate with nitridation but otherwise identical pretreatment and growth conditions, c -plane (0001) InN columnar structure was grown, instead of m -plane InN film. Structural anisotropy of the m -plane InN epitaxied on LAO is attributed to the I 1 type base-plane stacking faults according to the modified Williamson-Hall and TEM analyses. A rectangular-to-rectangular atomic stacking sequence and a commensurately lattice-matched condition in epitaxial direction of [1 2- 10] InN [001] LAO with a small misfit strain of ∼0.2% are proposed to realize this heteroepitaxy. Angle-dependent polarized UV-Raman spectra showed that all the InN phonon modes follow Raman selection rule well. Strong polarization anisotropy of photoluminescence (PL) emission located at ∼0.63 eV was observed, as evidenced by a high polarization degree of 87% of the m -plane InN determined by infrared polarized PL spectroscopy.",

author = "Hsiao, {Ching Lien} and Chen, {Jr Tai} and Hsu, {Hsu Cheng} and Liao, {Ying Chieh} and Tseng, {Po Han} and Chen, {Yen Ting} and Feng, {Zhe Chuan} and Tu, {Li Wei} and Chou, {Mitch M.C.} and Chen, {Li Chyong} and Chen, {Kuei Hsien}",

note = "Funding Information: The authors thank Professor Jens Birch, Link{\"o}ping University in Sweden, for his help in XRC measurement and fruitful discussion. This work was financially supported by National Science Council (NSC 97-2112-M-002-002) and Ministry of Education in Taiwan as well as the USAFOSR-AOARD-074077.",

year = "2010",

month = apr,

day = "1",

doi = "10.1063/1.3359680",

language = "English",

volume = "107",

journal = "Journal of Applied Physics",

issn = "0021-8979",

publisher = "American Institute of Physics Publising LLC",

number = "7",

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TY - JOUR

T1 - M -plane (10 1- 0) InN heteroepitaxied on (100) -γ -LiAlO2 substrate

T2 - Growth orientation control and characterization of structural and optical anisotropy

AU - Hsiao, Ching Lien

AU - Chen, Jr Tai

AU - Hsu, Hsu Cheng

AU - Liao, Ying Chieh

AU - Tseng, Po Han

AU - Chen, Yen Ting

AU - Feng, Zhe Chuan

AU - Tu, Li Wei

AU - Chou, Mitch M.C.

AU - Chen, Li Chyong

AU - Chen, Kuei Hsien

N1 - Funding Information: The authors thank Professor Jens Birch, Linköping University in Sweden, for his help in XRC measurement and fruitful discussion. This work was financially supported by National Science Council (NSC 97-2112-M-002-002) and Ministry of Education in Taiwan as well as the USAFOSR-AOARD-074077.

PY - 2010/4/1

Y1 - 2010/4/1

N2 - Heteroepitaxial growth of m -plane (10 1- 0) InN film on (100) -γ -LiAlO2 (LAO) substrate has been realized by plasma-assisted molecular-beam epitaxy. Surface treatment of LAO substrate plays an important role in controlling the resultant phase and purity of m -plane InN. X-ray diffraction, reflection high-energy electron diffraction, electron back scatter diffraction, and transmission electron microscopy (TEM) studies revealed formation of pure m -plane InN film using substrate preannealed at 800 °C but without any nitridation. In contrast, using substrate with nitridation but otherwise identical pretreatment and growth conditions, c -plane (0001) InN columnar structure was grown, instead of m -plane InN film. Structural anisotropy of the m -plane InN epitaxied on LAO is attributed to the I 1 type base-plane stacking faults according to the modified Williamson-Hall and TEM analyses. A rectangular-to-rectangular atomic stacking sequence and a commensurately lattice-matched condition in epitaxial direction of [1 2- 10] InN [001] LAO with a small misfit strain of ∼0.2% are proposed to realize this heteroepitaxy. Angle-dependent polarized UV-Raman spectra showed that all the InN phonon modes follow Raman selection rule well. Strong polarization anisotropy of photoluminescence (PL) emission located at ∼0.63 eV was observed, as evidenced by a high polarization degree of 87% of the m -plane InN determined by infrared polarized PL spectroscopy.

AB - Heteroepitaxial growth of m -plane (10 1- 0) InN film on (100) -γ -LiAlO2 (LAO) substrate has been realized by plasma-assisted molecular-beam epitaxy. Surface treatment of LAO substrate plays an important role in controlling the resultant phase and purity of m -plane InN. X-ray diffraction, reflection high-energy electron diffraction, electron back scatter diffraction, and transmission electron microscopy (TEM) studies revealed formation of pure m -plane InN film using substrate preannealed at 800 °C but without any nitridation. In contrast, using substrate with nitridation but otherwise identical pretreatment and growth conditions, c -plane (0001) InN columnar structure was grown, instead of m -plane InN film. Structural anisotropy of the m -plane InN epitaxied on LAO is attributed to the I 1 type base-plane stacking faults according to the modified Williamson-Hall and TEM analyses. A rectangular-to-rectangular atomic stacking sequence and a commensurately lattice-matched condition in epitaxial direction of [1 2- 10] InN [001] LAO with a small misfit strain of ∼0.2% are proposed to realize this heteroepitaxy. Angle-dependent polarized UV-Raman spectra showed that all the InN phonon modes follow Raman selection rule well. Strong polarization anisotropy of photoluminescence (PL) emission located at ∼0.63 eV was observed, as evidenced by a high polarization degree of 87% of the m -plane InN determined by infrared polarized PL spectroscopy.

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ER -

M -plane (10 1- 0) InN heteroepitaxied on (100) -γ -LiAlO₂ substrate: Growth orientation control and characterization of structural and optical anisotropy

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