m-plane GaN/InGaN/AlInN on LiAlO2 grown by MOVPE

H. Behmenburg; T. C. Wen; Y. Dikme; C. Mauder; L. Rahimzadeh Khoshroo; M. M.C. Chou; M. V. Rzheutskii; E. V. Lutsenko; G. P. Yablonskii; J. Woitok; H. Kalisch; R. H. Jansen; M. Heuken

doi:10.1002/pssb.200778565

m-plane GaN/InGaN/AlInN on LiAlO₂ grown by MOVPE

H. Behmenburg
, T. C. Wen
, Y. Dikme
, C. Mauder
, L. Rahimzadeh Khoshroo
, M. M.C. Chou
, M. V. Rzheutskii
, E. V. Lutsenko
, G. P. Yablonskii
, J. Woitok
, H. Kalisch
, R. H. Jansen
, M. Heuken

Program on Key Materials

Research output: Contribution to journal › Article › peer-review

5 Citations (Scopus)

Abstract

We present a study of growth and properties of m-plane GaN/InGaN/AlInN structures on LiAlO2 substrates grown by metal organic vapour phase epitaxy (MOVPE). A buffer structure, including an m-plane AlInN interlayer prior to GaN growth, has been developed. Quantum well structures on top of this buffer showed absence of polarization-induced electric fields verified by room temperature photoluminescence (RT PL) measurements with different excitation intensities. Different samples with peak emission wavelength between 433 nm and 495 nm exhibited stable peak position even for high excitation intensities of 500 kW/cm².

Original language	English
Pages (from-to)	893-895
Number of pages	3
Journal	Physica Status Solidi (B) Basic Research
Volume	245
Issue number	5
DOIs	https://doi.org/10.1002/pssb.200778565
Publication status	Published - 2008 May

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Condensed Matter Physics

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10.1002/pssb.200778565

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@article{48050fce9c9c4e3ca505ae99fe4609fc,

title = "m-plane GaN/InGaN/AlInN on LiAlO2 grown by MOVPE",

abstract = "We present a study of growth and properties of m-plane GaN/InGaN/AlInN structures on LiAlO2 substrates grown by metal organic vapour phase epitaxy (MOVPE). A buffer structure, including an m-plane AlInN interlayer prior to GaN growth, has been developed. Quantum well structures on top of this buffer showed absence of polarization-induced electric fields verified by room temperature photoluminescence (RT PL) measurements with different excitation intensities. Different samples with peak emission wavelength between 433 nm and 495 nm exhibited stable peak position even for high excitation intensities of 500 kW/cm2.",

author = "H. Behmenburg and Wen, \{T. C.\} and Y. Dikme and C. Mauder and \{Rahimzadeh Khoshroo\}, L. and Chou, \{M. M.C.\} and Rzheutskii, \{M. V.\} and Lutsenko, \{E. V.\} and Yablonskii, \{G. P.\} and J. Woitok and H. Kalisch and Jansen, \{R. H.\} and M. Heuken",

year = "2008",

month = may,

doi = "10.1002/pssb.200778565",

language = "English",

volume = "245",

pages = "893--895",

journal = "Physica Status Solidi (B) Basic Research",

issn = "0370-1972",

publisher = "John Wiley and Sons Inc.",

number = "5",

}

TY - JOUR

T1 - m-plane GaN/InGaN/AlInN on LiAlO2 grown by MOVPE

AU - Behmenburg, H.

AU - Wen, T. C.

AU - Dikme, Y.

AU - Mauder, C.

AU - Rahimzadeh Khoshroo, L.

AU - Chou, M. M.C.

AU - Rzheutskii, M. V.

AU - Lutsenko, E. V.

AU - Yablonskii, G. P.

AU - Woitok, J.

AU - Kalisch, H.

AU - Jansen, R. H.

AU - Heuken, M.

PY - 2008/5

Y1 - 2008/5

N2 - We present a study of growth and properties of m-plane GaN/InGaN/AlInN structures on LiAlO2 substrates grown by metal organic vapour phase epitaxy (MOVPE). A buffer structure, including an m-plane AlInN interlayer prior to GaN growth, has been developed. Quantum well structures on top of this buffer showed absence of polarization-induced electric fields verified by room temperature photoluminescence (RT PL) measurements with different excitation intensities. Different samples with peak emission wavelength between 433 nm and 495 nm exhibited stable peak position even for high excitation intensities of 500 kW/cm2.

AB - We present a study of growth and properties of m-plane GaN/InGaN/AlInN structures on LiAlO2 substrates grown by metal organic vapour phase epitaxy (MOVPE). A buffer structure, including an m-plane AlInN interlayer prior to GaN growth, has been developed. Quantum well structures on top of this buffer showed absence of polarization-induced electric fields verified by room temperature photoluminescence (RT PL) measurements with different excitation intensities. Different samples with peak emission wavelength between 433 nm and 495 nm exhibited stable peak position even for high excitation intensities of 500 kW/cm2.

UR - https://www.scopus.com/pages/publications/55549117888

UR - https://www.scopus.com/pages/publications/55549117888#tab=citedBy

U2 - 10.1002/pssb.200778565

DO - 10.1002/pssb.200778565

M3 - Article

AN - SCOPUS:55549117888

SN - 0370-1972

VL - 245

SP - 893

EP - 895

JO - Physica Status Solidi (B) Basic Research

JF - Physica Status Solidi (B) Basic Research

IS - 5

ER -

m-plane GaN/InGaN/AlInN on LiAlO₂ grown by MOVPE

Abstract

All Science Journal Classification (ASJC) codes

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