Magnetic and transport properties of Mn-ion implanted Si

V. Preisler; M. Ogawa; X. Han; K. L. Wang

doi:10.1063/1.3295480

Magnetic and transport properties of Mn-ion implanted Si

V. Preisler
, M. Ogawa
, X. Han
, K. L. Wang

College of Electrical Engineering and Computer Science

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

We investigate the magnetic and transport properties of Mn-ion implanted Si. Both temperature dependent and field dependent measurements of the samples using a SQUID magnometer reveal ferromagnetic properties at room temperature. Magnetotransport measurements show a large positive magnetoresistance up to 4.5 T with no signs of saturation.

Original language	English
Title of host publication	Physics of Semiconductors - 29th International Conference, ICPS 29
Pages	415-416
Number of pages	2
DOIs	https://doi.org/10.1063/1.3295480
Publication status	Published - 2009
Event	29th International Conference on Physics of Semiconductors, ICPS 29 - Rio de Janeiro, Brazil Duration: 2008 Jul 27 → 2008 Aug 1

Publication series

Name	AIP Conference Proceedings
Volume	1199
ISSN (Print)	0094-243X
ISSN (Electronic)	1551-7616

Conference

Conference	29th International Conference on Physics of Semiconductors, ICPS 29
Country/Territory	Brazil
City	Rio de Janeiro
Period	08-07-27 → 08-08-01

All Science Journal Classification (ASJC) codes

General Physics and Astronomy

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10.1063/1.3295480

Cite this

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title = "Magnetic and transport properties of Mn-ion implanted Si",

abstract = "We investigate the magnetic and transport properties of Mn-ion implanted Si. Both temperature dependent and field dependent measurements of the samples using a SQUID magnometer reveal ferromagnetic properties at room temperature. Magnetotransport measurements show a large positive magnetoresistance up to 4.5 T with no signs of saturation.",

author = "V. Preisler and M. Ogawa and X. Han and Wang, \{K. L.\}",

year = "2009",

doi = "10.1063/1.3295480",

language = "English",

isbn = "9780735407367",

series = "AIP Conference Proceedings",

pages = "415--416",

booktitle = "Physics of Semiconductors - 29th International Conference, ICPS 29",

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TY - GEN

T1 - Magnetic and transport properties of Mn-ion implanted Si

AU - Preisler, V.

AU - Ogawa, M.

AU - Han, X.

AU - Wang, K. L.

PY - 2009

Y1 - 2009

N2 - We investigate the magnetic and transport properties of Mn-ion implanted Si. Both temperature dependent and field dependent measurements of the samples using a SQUID magnometer reveal ferromagnetic properties at room temperature. Magnetotransport measurements show a large positive magnetoresistance up to 4.5 T with no signs of saturation.

AB - We investigate the magnetic and transport properties of Mn-ion implanted Si. Both temperature dependent and field dependent measurements of the samples using a SQUID magnometer reveal ferromagnetic properties at room temperature. Magnetotransport measurements show a large positive magnetoresistance up to 4.5 T with no signs of saturation.

UR - https://www.scopus.com/pages/publications/74849108038

UR - https://www.scopus.com/pages/publications/74849108038#tab=citedBy

U2 - 10.1063/1.3295480

DO - 10.1063/1.3295480

M3 - Conference contribution

AN - SCOPUS:74849108038

SN - 9780735407367

T3 - AIP Conference Proceedings

SP - 415

EP - 416

BT - Physics of Semiconductors - 29th International Conference, ICPS 29

T2 - 29th International Conference on Physics of Semiconductors, ICPS 29

Y2 - 27 July 2008 through 1 August 2008

ER -

Magnetic and transport properties of Mn-ion implanted Si

Abstract

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Conference

All Science Journal Classification (ASJC) codes

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