TY - JOUR
T1 - Magnetic quantization of sp3 bonding in monolayer gray tin
AU - Chen, Szu Chao
AU - Wu, Chung Lin
AU - Wu, Jhao Ying
AU - Lin, Ming Fa
N1 - Publisher Copyright:
©2016 American Physical Society.
PY - 2016/7/8
Y1 - 2016/7/8
N2 - A generalized tight-binding model, which is based on the subenvelope functions of the different sublattices, is developed to explore the novel magnetic quantization in monolayer gray tin (tinene). The effects due to the sp3 bonding, the spin-orbital coupling, the magnetic field, and the electric field are simultaneously taken into consideration. The unique magnetoelectronic properties lie in two groups of low-lying Landau levels, with different orbital components, localization centers, state degeneracy, spin configurations, and magnetic- and electric-field dependencies. The first and second groups mainly come from the 5pz and (5px,5py) orbitals, respectively. Their Landau-level splittings are, respectively, induced by the electric field and spin-orbital interactions. The intragroup anticrossings are only revealed in the former. The unique tinene Landau levels are absent in graphene, silicene, and germanene.
AB - A generalized tight-binding model, which is based on the subenvelope functions of the different sublattices, is developed to explore the novel magnetic quantization in monolayer gray tin (tinene). The effects due to the sp3 bonding, the spin-orbital coupling, the magnetic field, and the electric field are simultaneously taken into consideration. The unique magnetoelectronic properties lie in two groups of low-lying Landau levels, with different orbital components, localization centers, state degeneracy, spin configurations, and magnetic- and electric-field dependencies. The first and second groups mainly come from the 5pz and (5px,5py) orbitals, respectively. Their Landau-level splittings are, respectively, induced by the electric field and spin-orbital interactions. The intragroup anticrossings are only revealed in the former. The unique tinene Landau levels are absent in graphene, silicene, and germanene.
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U2 - 10.1103/PhysRevB.94.045410
DO - 10.1103/PhysRevB.94.045410
M3 - Article
AN - SCOPUS:84978429969
SN - 2469-9950
VL - 94
JO - Physical Review B
JF - Physical Review B
IS - 4
M1 - 045410
ER -