Magnetic tunnel junctions and their applications in non-volatile circuits

Juan G. Alzate; Pedram Khalili Amiri; Kang L. Wang

doi:10.1007/978-94-007-6892-5_42

Magnetic tunnel junctions and their applications in non-volatile circuits

Juan G. Alzate, Pedram Khalili Amiri, Kang L. Wang

College of Electrical Engineering and Computer Science

Research output: Chapter in Book/Report/Conference proceeding › Chapter

4 Citations (Scopus)

Abstract

Magnetic tunnel junctions (MTJs) have become the basic building blocks of spintronic nonvolatile circuits due to their large tunneling magnetoresistance (TMR) values for readout and the possibility to electrically write information into the devices. This chapter focuses on evaluating the performance, challenges,and design parameters of MTJ devices for nonvolatile circuits. The reading, writing, and storing functions are evaluated under the light of the different requirements of nonvolatile circuit applications and utilizing new developments in the design and realization of state-of-the-art MTJs. Finally, examples of the role of MTJs in CMOS-based and beyond-CMOS computing are presented.

Original language	English
Title of host publication	Handbook of Spintronics
Publisher	Springer Netherlands
Pages	1127-1171
Number of pages	45
ISBN (Electronic)	9789400768925
ISBN (Print)	9789400768918
DOIs	https://doi.org/10.1007/978-94-007-6892-5_42
Publication status	Published - 2015 Sept 16

All Science Journal Classification (ASJC) codes

General Computer Science
General Engineering
General Materials Science

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10.1007/978-94-007-6892-5_42

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AU - Alzate, Juan G.

AU - Amiri, Pedram Khalili

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N2 - Magnetic tunnel junctions (MTJs) have become the basic building blocks of spintronic nonvolatile circuits due to their large tunneling magnetoresistance (TMR) values for readout and the possibility to electrically write information into the devices. This chapter focuses on evaluating the performance, challenges,and design parameters of MTJ devices for nonvolatile circuits. The reading, writing, and storing functions are evaluated under the light of the different requirements of nonvolatile circuit applications and utilizing new developments in the design and realization of state-of-the-art MTJs. Finally, examples of the role of MTJs in CMOS-based and beyond-CMOS computing are presented.

AB - Magnetic tunnel junctions (MTJs) have become the basic building blocks of spintronic nonvolatile circuits due to their large tunneling magnetoresistance (TMR) values for readout and the possibility to electrically write information into the devices. This chapter focuses on evaluating the performance, challenges,and design parameters of MTJ devices for nonvolatile circuits. The reading, writing, and storing functions are evaluated under the light of the different requirements of nonvolatile circuit applications and utilizing new developments in the design and realization of state-of-the-art MTJs. Finally, examples of the role of MTJs in CMOS-based and beyond-CMOS computing are presented.

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Magnetic tunnel junctions and their applications in non-volatile circuits

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