We report a theoretical study on the magneto-optical property of a thin AlAs/GaAs quantum well. Our model includes both the excitonic effect and Γ-X valley mixing. A delta-like interfacial potential introduced by H.C. Liu [Appl. Phys. Lett., 51, 1987, 1019] is employed to describe the Γ-X mixing, which leads to a set of coupled differential equations in mixing type-I and type-II excitons. The eigenvalues and eigenfunctions thus obtained are then used to calculate the absorption spectrums for various strengths of the perpendicular magnetic field. Our result shows a field induced Type-I to Type-II magnetoexciton transition at 24 T for AlAs(25 Å)/GaAs(31 Å) quantum well.
All Science Journal Classification (ASJC) codes
- Condensed Matter Physics
- Materials Chemistry