Magnetoexciton in the thin AlAs/GaAs quantum well

C. P. Chang; R. B. Chen; Yan Ten Lu

doi:10.1016/S0038-1098(98)00317-2

Magnetoexciton in the thin AlAs/GaAs quantum well

C. P. Chang
, R. B. Chen
, Yan Ten Lu

Department of Physics

Research output: Contribution to journal › Article › peer-review

1 Citation (Scopus)

Abstract

We report a theoretical study on the magneto-optical property of a thin AlAs/GaAs quantum well. Our model includes both the excitonic effect and Γ-X valley mixing. A delta-like interfacial potential introduced by H.C. Liu [Appl. Phys. Lett., 51, 1987, 1019] is employed to describe the Γ-X mixing, which leads to a set of coupled differential equations in mixing type-I and type-II excitons. The eigenvalues and eigenfunctions thus obtained are then used to calculate the absorption spectrums for various strengths of the perpendicular magnetic field. Our result shows a field induced Type-I to Type-II magnetoexciton transition at 24 T for AlAs(25 Å)/GaAs(31 Å) quantum well.

Original language	English
Pages (from-to)	99-104
Number of pages	6
Journal	Solid State Communications
Volume	108
Issue number	2
DOIs	https://doi.org/10.1016/S0038-1098(98)00317-2
Publication status	Published - 1998 Aug 21

All Science Journal Classification (ASJC) codes

General Chemistry
Condensed Matter Physics
Materials Chemistry

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10.1016/S0038-1098(98)00317-2

Cite this

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title = "Magnetoexciton in the thin AlAs/GaAs quantum well",

abstract = "We report a theoretical study on the magneto-optical property of a thin AlAs/GaAs quantum well. Our model includes both the excitonic effect and Γ-X valley mixing. A delta-like interfacial potential introduced by H.C. Liu [Appl. Phys. Lett., 51, 1987, 1019] is employed to describe the Γ-X mixing, which leads to a set of coupled differential equations in mixing type-I and type-II excitons. The eigenvalues and eigenfunctions thus obtained are then used to calculate the absorption spectrums for various strengths of the perpendicular magnetic field. Our result shows a field induced Type-I to Type-II magnetoexciton transition at 24 T for AlAs(25 {\AA})/GaAs(31 {\AA}) quantum well.",

author = "Chang, \{C. P.\} and Chen, \{R. B.\} and Lu, \{Yan Ten\}",

note = "Funding Information: We would like to thank the Taiwan National Science Council for supporting this work under contract number NSC87-2112-M268-001. Copyright: Copyright 2017 Elsevier B.V., All rights reserved.",

year = "1998",

month = aug,

day = "21",

doi = "10.1016/S0038-1098(98)00317-2",

language = "English",

volume = "108",

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TY - JOUR

T1 - Magnetoexciton in the thin AlAs/GaAs quantum well

AU - Chang, C. P.

AU - Chen, R. B.

AU - Lu, Yan Ten

N1 - Funding Information: We would like to thank the Taiwan National Science Council for supporting this work under contract number NSC87-2112-M268-001. Copyright: Copyright 2017 Elsevier B.V., All rights reserved.

PY - 1998/8/21

Y1 - 1998/8/21

N2 - We report a theoretical study on the magneto-optical property of a thin AlAs/GaAs quantum well. Our model includes both the excitonic effect and Γ-X valley mixing. A delta-like interfacial potential introduced by H.C. Liu [Appl. Phys. Lett., 51, 1987, 1019] is employed to describe the Γ-X mixing, which leads to a set of coupled differential equations in mixing type-I and type-II excitons. The eigenvalues and eigenfunctions thus obtained are then used to calculate the absorption spectrums for various strengths of the perpendicular magnetic field. Our result shows a field induced Type-I to Type-II magnetoexciton transition at 24 T for AlAs(25 Å)/GaAs(31 Å) quantum well.

AB - We report a theoretical study on the magneto-optical property of a thin AlAs/GaAs quantum well. Our model includes both the excitonic effect and Γ-X valley mixing. A delta-like interfacial potential introduced by H.C. Liu [Appl. Phys. Lett., 51, 1987, 1019] is employed to describe the Γ-X mixing, which leads to a set of coupled differential equations in mixing type-I and type-II excitons. The eigenvalues and eigenfunctions thus obtained are then used to calculate the absorption spectrums for various strengths of the perpendicular magnetic field. Our result shows a field induced Type-I to Type-II magnetoexciton transition at 24 T for AlAs(25 Å)/GaAs(31 Å) quantum well.

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UR - https://www.scopus.com/pages/publications/0032142331#tab=citedBy

U2 - 10.1016/S0038-1098(98)00317-2

DO - 10.1016/S0038-1098(98)00317-2

M3 - Article

AN - SCOPUS:0032142331

SN - 0038-1098

VL - 108

SP - 99

EP - 104

JO - Solid State Communications

JF - Solid State Communications

IS - 2

ER -

Magnetoexciton in the thin AlAs/GaAs quantum well

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